FDS6689S Rev B2 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA 30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25°C
21
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 500
µA
I
GSS
Gate–Body Leakage V
GS
= ±20 V, V
DS
= 0 V ±100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA 1 1.6 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25°C
–5
mV/°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 14.5 A
V
GS
=10 V, I
D
=16 A, T
J
=150°C
4.5
5.2
6.1
5.4
6.5
mΩ
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 16 A 74 S
Dynamic Characteristics
C
iss
Input Capacitance 3290 pF
C
oss
Output Capacitance 890 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
290 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.5 2.6
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 12 22 ns
t
r
Turn–On Rise Time 12 22 ns
t
d(off)
Turn–Off Delay Time 30 46 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
60 96 ns
Q
g(TOT)
Total Gate Charge at V
GS
=10V 56 78 nC
Q
g
Total Gate Charge at V
GS
=5V 31 44 nC
Q
gs
Gate–Source Charge 8.2 nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 16 A
9.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A (Note 2)
380 700 mV
t
rr
Diode Reverse Recovery Time 30 ns
I
RM
Diode Reverse Recovery Current 2 A
Q
rr
Diode Reverse Recovery Charge
I
F
= 16 A,
d
iF
/d
t
= 300 A/µs (Note 3)
31 nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3. See “SyncFET Schottky body diode characteristics” below.
FDS6689S 30V N-Channel PowerTrench SyncFET
