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NTHD2102PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 5
1 Publication Order Number:
NTHD2102P/D
NTHD2102P
Power MOSFET
−8.0 V, −4.6 A Dual P−Channel ChipFETt
Features
• Offers an Ultra Low R
DS(on)
Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
making it an Ideal Device for Applications where Board Space is at a
Premium
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Designed to Provide Low R
DS(on)
at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−8.0 V
Gate−to−Source Voltage − Continuous V
GS
"8.0 V
Drain Current − Continuous
− 5 seconds
I
D
I
D
−3.4
−4.6
A
Total Power Dissipation
Continuous @ T
A
= 25°C
(5 sec) @ T
A
= 25°C
Continuous @ 85°C
(5 sec) @ 85°C
P
D
1.1
2.1
0.6
1.1
W
Operating Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
+150
°C
Continuous Source Current
(Diode Conduction)
Is −1.1 A
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
R
q
JA
R
q
JA
60
113
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
P−Channel MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTHD2102PT1 ChipFET 3000/Tape & Reel
http://onsemi.com
S
1
G
1
D
1
P−Channel MOSFET
S
2
G
2
D
2
−8.0 V
50 mW @ −4.5 V
I
D
MAXV
(BR)DSS
R
DS(on)
TYP
−4.6 A
68 mW @ −2.5 V
100 mW @ −1.8 V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 2
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
8
7
6
5
5
6
7
81
2
3
4
NTHD2102PT1G ChipFET
(Pb−Free)
3000/Tape & Reel
D5 M
G
D5 = Specific Device Code
M = Month Code
G = Pb−Free Package
NTHD2102P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
V
(Br)DSS
V
GS
= 0 V, I
D
= −250 mA
−8.0 − − V
Gate−Body Leakage Current Zero I
GSS
V
DS
= 0 V, V
GS
= "8.0 V − "100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= −6.4 V, V
GS
= 0 V
V
DS
= −6.4 V, V
GS
= 0 V,
T
J
= 85°C
−
−
−1.0
−5.0
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= −250 mA
−0.45 − −1.5 V
Static Drain−to−Source On−Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −3.4 A
V
GS
= −2.5 V, I
D
= −2.7 A
V
GS
= −1.8 V, I
D
= −1.0 A
−
−
−
50
68
100
58
85
160
mW
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −3.4 A − 8.0 − S
Diode Forward Voltage V
SD
I
S
= −1.1 A, V
GS
= 0 V − −0.8 −1.2 V
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
V
DS
= −6.4 V − 715 − pF
Output Capacitance C
oss
V
GS
= 0 V − 160 −
Transfer Capacitance C
rss
f = 1.0 MHz − 120 −
SWITCHING CHARACTERISTICS (Note 3
Turn−On Delay Time t
d(on)
V
DD
= −6.4 V 8.0 − ns
Rise Time t
r
V
GS
= −4.5 V 20 −
Turn−Off Delay Time t
d(off)
I
D
= −3.2 A 20 −
Fall Time t
f
R
G
= 2.0 W
15 −
Gate Charge Q
g
V
GS
= −2.5 V 8.0 16 nC
Q
gs
I
D
= −3.2 A 2.2 −
Q
gd
V
DS
= −6.4 V 4.0 −
Source−Drain Reverse Recovery Time t
rr
I
F
= −0.9 A, di/dt = 100 15 30 nA
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTHD2102P
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
10
8
6
4
2
0
01 23456
−2 V
−1.8 V
−1.4 V
C
oss
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5
T
j
= 100°C
25°C
−55°C
V
GS
= −4.5 V
V
GS
= −1.8 V
0.30
0.25
0.15
0.05
0
02 4 6 83
1800
600
300
0
−8 −6 −4 −2 6 8
C
iss
C
rss
1.2
1.1
1.0
0.9
0.8
−50 −25 0 25 50 75 100 125 150
V
GS
= −4.5 V
3.0
0.20
0.10
1500
1200
V
GS
= −2.5 V
−V
DS
, Drain−to−Source Voltage (V) −V
GS
, Gate−to−Source Voltage (V)
−I
D,
Drain Current (A)
−I
D
, Drain Current (A)
−V
DS
, Drain−to−Source Voltage (V)
C, Capacitance (pF)
r
DS(on),
On−Resistance (
Ω )
(Normalized)
T
J
, Junction Temperature (°C)
r
DS(on),
On−Resistance (
Ω )
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Figure 4. On−Resistance Variation vs.
Temperature
Figure 5. Drain−to−Source Leakage Current
vs. Voltage
Figure 6. Capacitance Variation
−2.4 thru −8 V
−I
D,
Drain Current (A)
−1.6 V
T
J
= 25°C
57
10000
10
1
02468
1000
100
−V
DS
, Drain−to−Source Voltage (V)
−IDSS, Leakage (nA)
V
GS
= 0 V
T
J
=
125°C
T
j
= 100°C
900
024
C
iss
C
rss
T
J
= 25°C
P1-P3P4-P6

NTHD2102PT1G

Mfr. #:
Buy NTHD2102PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2P-CH 8V 3.4A CHIPFET
Lifecycle:
New from this manufacturer.
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