APT50M38JLL

APT50M38JLL
050-7020 Rev D 4-2004
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 500 0 10 20 30 40 50
0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5
352
100
10
1
16
12
8
4
0
40,000
10,000
1,000
100
10
400
100
10
1
C
rss
C
oss
C
iss
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
V
DS
=250V
V
DS
=100V
V
DS
=400V
I
D
= 88A
1mS
100µS
T
J
=+150°C
T
J
=+25°C
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100µH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
20 40 60 80 100 120 140 20 40 60 80 100 120 140
20 40 60 80 100 120 140 0 5 10 15 20
V
DD
= 333V
I
D
= 88A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100µH
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
050-7020 Rev D 4-2004
Typical Performance Curves APT50M38JLL
ISOTOP
®
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 19, Turn-on Switching Waveforms and DefinitionsFigure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
Switching Energy
5%
10%
t
d(on)
5%
10%
90%
t
r
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
0
t
d(off)
90%
90%
t
f
I
C
D.U.T.
APT60DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G

APT50M38JLL

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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