Operation modes M48Z2M1Y, M48Z2M1V
10/20 Doc ID 5135 Rev 6
Table 4. WRITE mode AC characteristics
2.3 Data retention mode
With valid V
CC
applied, the M48Z2M1Y/V operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself t
WP
after V
CC
falls below V
PFD
. All outputs become high impedance, and all
inputs are treated as “Don't care.
If power fail detection occurs during a valid access, the memory cycle continues to
completion. If the memory cycle fails to terminate within the time t
WP
, write protection takes
place. When V
CC
drops below V
SO
, the control circuit switches power to the internal energy
source which preserves data.
The internal coin cells will maintain data in the M48Z2M1Y/V after the initial application of
V
CC
for an accumulated period of at least 10 years when V
CC
is less than V
SO
. As system
power returns and V
CC
rises above V
SO
, the batteries are disconnected, and the power
supply is switched to external V
CC
. Write protection continues for t
ER
after V
CC
reaches
V
PFD
to allow for processor stabilization. After t
ER
, normal RAM operation can resume.
For more information on battery storage life refer to the application note AN1012.
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6V (except where
noted).
M48Z2M1Y M48Z2M1V
Unit–70 –85
Min Max Min Max
t
AVAV
WRITE cycle time 70 85 ns
t
AVEH
Address valid to chip enable high 65 75 ns
t
AVEL
Address valid to chip enable low 0 0 ns
t
AVWH
Address valid to WRITE enable high 65 75 ns
t
AVWL
Address valid to WRITE enable low 0 0 ns
t
DVEH
Input valid to chip enable high 30 35 ns
t
DVWH
Input valid to WRITE enable high 30 35 ns
t
EHAX
Chip enable high to address transition 15 15 ns
t
EHDX
Chip enable high to input transition 10 15 ns
t
ELEH
Chip enable low to chip enable high 55 75 ns
t
WHAX
WRITE enable high to address transition 5 5 ns
t
WHDX
WRITE enable high to input transition 0 0 ns
t
WHQX
(2)(3)
2. C
L
= 5 pF (see Figure 9 on page 13).
3. If E
goes low simultaneously with W going low, the outputs remain in the high impedance state.
WRITE enable high to output transition 5 5 ns
t
WLQZ
(2)(3)
WRITE enable low to output Hi-Z 25 30 ns
t
WLWH
WRITE enable pulse width 55 65 ns
Obsolete Product(s) - Obsolete Product(s)
M48Z2M1Y, M48Z2M1V Operation modes
Doc ID 5135 Rev 6 11/20
2.4 V
CC
noise and negative going transients
I
CC
transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the V
CC
bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the V
CC
bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure 8) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
CC
that drive it to values below V
SS
by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
schottky diode from V
CC
to V
SS
(cathode connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 8. Supply voltage protection
AI02169
V
CC
0.1µF DEVICE
V
CC
V
SS
Obsolete Product(s) - Obsolete Product(s)
Maximum ratings M48Z2M1Y, M48Z2M1V
12/20 Doc ID 5135 Rev 6
3 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 5. Absolute maximum ratings
Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Symbol Parameter Value Unit
T
A
Ambient operating temperature 0 to 70 °C
T
STG
Storage temperature (V
CC
off) –40 to 85 °C
T
BIAS
Temperature under bias –40 to 85 °C
T
SLD
(1)
1. Soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. Furthermore, the devices
shall not be exposed to IR reflow nor preheat cycles (as performed as part of wave soldering). ST
recommends the devices be hand-soldered or placed in sockets to avoid heat damage to the batteries.
Lead solder temperature for 10 seconds 260 °C
V
IO
Input or output voltages
M48Z2M1Y –0.3 to 7 V
M48Z2M1V –0.3 to 4.6 V
V
CC
Supply voltage
M48Z2M1Y –0.3 to 7 V
M48Z2M1V –0.3 to 4.6 V
I
O
Output current 20 mA
P
D
Power dissipation 1 W
Obsolete Product(s) - Obsolete Product(s)

M48Z2M1V-85PL1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC NVSRAM 16M PARALLEL 36PLDIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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