SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE BCV26 - BCV27
BCV46 - BCV47
PARTMARKING DETAILS BCV26 - ZFD
BCV46 - ZFE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCV26 BCV46 UNIT
Collector-Base Voltage V
CBO
-40 -80 V
Collector-Emitter Voltage V
CEO
-30 -60 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-800 mA
Continuous Collector Current I
C
-500 mA
Base Current I
B
-100 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL BCV26 BCV46
UNIT
CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40 -80
V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30 -60
V
I
C
=10mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 -10
V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
-100
-10
-100
-10
nA
nA
µA
µA
V
CB
= -30V
V
CB
= -60V
V
CB
=-30V,T
amb
=150
o
C
V
CB
=-60V,T
amb
=150
o
C
Emitter Base
Cut-Off Current
I
EBO
-100 -100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.0 -1.0
V
I
C
=-100mA,I
B
=-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.5 -1.5
V
I
C
=-100mA,I
B
=-0.1mA*
Static Forward Current
Transfer Ratio
h
FE
4K
10K
20K
4K
2K
4K
10K
2K
I
C
=-100µΑ, V
CE
=-1V
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
Transition Frequency f
T
200 Typical 200 Typical
MHz
I
C
=-50mA, V
CE
=-5V
f = 20MHz
Output Capacitance C
obo
4.5 Typical 4.5 Typical
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices Periodic Sample Test Only.
BCV26
BCV46
C
B
E
3 - 21
