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MBR5H100MFST3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1 Publication Order Number:
MBR5H100MFS/D
MBR5H100MFS,
NRVB5H100MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 150°C)
I
F(AV)
5 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 150°C)
I
FRM
10 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
200 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Voltage Rate of Change
(Rated V
R
)
dv/dt 10,000
V/ms
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping†
ORDERING INFORMATION
MBR5H100MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B5H100 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B5H100
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR5H100MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB5H100MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB5H100MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR5H100MFS, NRVB5H100MFS
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 2.4 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 5 Amps, T
J
= 125°C)
(i
F
= 5 Amps, T
J
= 25°C)
v
F
0.56
0.6
0.6
0.73
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
3
0.003
13
0.1
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBR5H100MFS, NRVB5H100MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
Figure 3. Typical Reverse Current
Characteristics
Figure 4. Maximum Reverse Current
Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
908060403020100
1.E−10
908060504020100
Figure 5. Typical Junction Capacitance Figure 6. Forward Surge Safe Operating Area
V
R
, REVERSE VOLTAGE (V) PULSE DURATION (ms)
908060503020100
10
100
1000
10,000
4.03.02.01.00
140
160
180
200
220
260
280
300
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C
J
, JUNCTION CAPACITANCE (pF)
MAXIMUM FORWARD SURGE CURRENT (A)
−40°C
25°C
150°C
125°C
175°C
50 70 100
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E+00
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E+00
30 70 100
1.E−01
−40°C
25°C
150°C
125°C
175°C
40 70 100
240
Single pulse non−repetitive square
wave 25°C ambient
Mounted on a minimum pad, FR4
board, 1 oz. copper pour
1.E−01
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.81.61.00.80.60.40.20
0.1
1
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
1.2 1.4 2.0
−40°C
25°C
150°C
125°C
175°C
1.81.61.00.80.60.40.20
0.1
1
10
1.2 1.4 2.0
−40°C
25°C
125°C
175°C
P1-P3P4-P5

MBR5H100MFST3G

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Buy MBR5H100MFST3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 5A 100V SCHOTTKY RECT
Lifecycle:
New from this manufacturer.
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