2SD2679T100

2SD2679
Transistors
Rev.A 1/2
Packaging type
Code
Taping
Package MPT3
Basic ordering unit (pieces)
2SD2679
T100
1000
Part No.
2A / 30V Bipolar transistor
2SD2679
z
z
Applications!!!!!!!!!!!!!!!!!!
z
Dimensions (Unit : mm)
Low frequency amplification, driver
z
Features
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(V
CE(sat) d 350mV at IC= 1.5A, IB= 75mA)
z
Structure
NPN epitaxial planar silicon transistor
z
Absolute maximum ratings (Ta=25qC)
z
Packaging specifications
Power dissipation
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
tj
tstg
Limits
30
30
6
2
0.5
2
150
55 to +150
Unit
V
V
V
A
I
CP
DC
Pulse
4
W
°C
°C
1
2
3
1 Pw=1ms, single pulse.
2 Each terminal mounted on a recommended land.
3 Mounted on a 40×40×0.7mm ceramic board.
z
z
Electrical characteristics (Ta=25qC)
Parameter Conditions
Collector-base breakdown voltage
I
C=10μA
Collector-emitter breakdown voltage
I
C=1mA
Emitter-base breakdown voltage
I
E=10μA
Collector cut-off current
V
CB=30V
Emitter cut-off current
V
EB=6V
Collector-emitter saturation voltage
I
C/IB=1.5A/75mA
DC current gain
V
CE=2V, IC=200mA
Transition frequency
V
CE=2V, IE= 200mA , f=100MHz
Collector output capacitance
Symbol
BV
CBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Pulsed
hFE
fT
Cob
Min.
30
30
6
270
Typ.
180
280
20
Max.
100
100
370
680
Unit
V
nA
mV
MHz
pF
V
CB=10V , IE=0mA , f=1MHz
MPT3
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : XZ
2SD2679
Transistors
Rev.A 2/2
z
Electrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
01.4
0.2
0.4
0.6 0.8
1
1.2
V
CE
=2V
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.2 DC current gain
vs. collector current
10
100
1000
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
DC CURRENT GAIN : hFE
V
CE
=2V
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.3 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.1
1
10
0.001 0.01 0.1 1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
0.1
1
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
I
C
/I
B
=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.4 Base-emitter saturation voltage
vs. collector current
Fig.5 Gain bandwidth product
vs. emitter current
10
100
1000
0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25 C
V
CE
=2V
f= 100MHz
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10
100
1000
0.001 0.01 0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
I
C
=0A
f=1MHz
Ta=25 C
Cob
Cib
Notes
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The contents described herein are subject to change without notice. The specifications for the
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Appendix

2SD2679T100

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT BIPOLAR TRANSISTR 2A 30V
Lifecycle:
New from this manufacturer.
Delivery:
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