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VS-MBR40L15CW-N3

P1-P3P4-P6P7-P7
VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 04-Jan-18
1
Document Number: 96468
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR40L15CW... center tap Schottky rectifier
module has been optimized for ultralow forward voltage
drop specifically for the OR-ing of parallel power supplies.
The proprietary barrier technology allows for reliable
operation up to 125 °C junction temperature. Typical
applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant
power subsystems.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
R
15 V
V
F
at I
F
0.34 V
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
E
AS
5 mJ
Package TO-247AC 3L
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC 3L
1
3
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
20 A
pk
, T
J
= 125 °C (per leg, typical) 0.26 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-MBR40L15CW-N3 UNITS
Maximum DC reverse voltage V
R
T
J
= 100 °C 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per leg
I
F(AV)
50 % duty cycle, at T
C
= 86 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 5mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 04-Jan-18
2
Document Number: 96468
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
-0.42
V
40 A - 0.52
20 A
T
J
= 125 °C
0.26 0.34
40 A 0.37 0.50
Reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.182 V
Forward slope resistance r
t
7.6 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC,
(test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
1.4
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.7
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
6g
0.21 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC 3L MBR40L15CW
VS-MBR40L15CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 04-Jan-18
3
Document Number: 96468
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.61.41.2
0
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
1
10
100
0.1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
63912
15
0
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1051520
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-MBR40L15CW-N3

Mfr. #:
Buy VS-MBR40L15CW-N3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
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