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SQD25N06-22L_GE3

P1-P3P4-P6P7-P9P10-P11
SQD25N06-22L
www.vishay.com
Vishay Siliconix
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 65360
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω) at V
GS
= 10 V 0.022
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.033
I
D
(A) 25
Configuration Single
Package TO-252
TO-252
Top View
TO
G
D
S
Drain connected to tab
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
25
A
T
C
= 125 °C 20
Continuous Source Current (Diode Conduction)
a
I
S
25
Pulsed Drain Current
b
I
DM
100
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
24
Single Pulse Avalanche Energy E
AS
28 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
62
W
T
C
= 125 °C 20
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
2.4
SQD25N06-22L
www.vishay.com
Vishay Siliconix
S15-1873-Rev. D, 10-Aug-15
2
Document Number: 65360
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1.0
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 25 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 20 A - 0.018 0.022
Ω
V
GS
= 10 V I
D
= 20 A, T
J
= 125 °C - - 0.039
V
GS
= 10 V I
D
= 20 A, T
J
= 175 °C - - 0.049
V
GS
= 4.5 V I
D
= 20 A, T
J
= 25 °C - 0.027 0.033
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 12 A - 32 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 1580 1975
pF Output Capacitance C
oss
- 305 382
Reverse Transfer Capacitance C
rss
- 130 163
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 25 A
-3350
nC Gate-Source Charge
c
Q
gs
-5.3-
Gate-Drain Charge
c
Q
gd
-6.8-
Gate Resistance R
g
f = 1 MHz 0.5 1.3 3.3 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 1.2 Ω
I
D
≅ 25 A, V
GEN
= 10 V, R
g
= 1 Ω
-812
ns
Rise Time
c
t
r
-1015
Turn-Off Delay Time
c
t
d(off)
-2436
Fall Time
c
t
f
-69
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--100A
Forward Voltage V
SD
I
F
= 25 A, V
GS
= 0 V - 0.9 1.5 V
SQD25N06-22L
www.vishay.com
Vishay Siliconix
S15-1873-Rev. D, 10-Aug-15
3
Document Number: 65360
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
On-Resistance vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Drain Current
Drain Source Breakdown vs. Junction Temperature
V
DS
- Drain-to Source Voltage (V)
I
D
- Drain Current (A)
0
6
12
18
24
30
0246810
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
0
10
20
30
40
50
061218 24 30
T
C
= - 55 °C
25 °C
125 °C
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.5
0.9
1.3
1.7
2.1
2.5
-50 -25 0 25 50 75 100 125 150 175
V
GS
= 10 V
I
D
= 12 A
V
GS
= 4.5 V
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
6
12
18
24
30
02468 10
- 55 °C
T
C
= 125 °C
25 °C
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance ()
0
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
V
GS
= 10 V
V
GS
= 4.5 V
T
J
- Junction Temperature (°C)
60
64
68
72
76
80
-50 -25 0 25 50 75 100 125 150 175
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
P1-P3P4-P6P7-P9P10-P11

SQD25N06-22L_GE3

Mfr. #:
Buy SQD25N06-22L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 25A 62W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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