NVR5198NLT1G

© Semiconductor Components Industries, LLC, 2011
October, 2016 − Rev. 2
1 Publication Order Number:
NVR5198NL/D
NVR5198NL
Power MOSFET
60 V, 155 mW, Single N−Channel Logic
Level, SOT−23
Features
Small Footprint Industry Standard Surface Mount SOT−23 Package
Low R
DS(on)
for Low Conduction Losses and Improved Efficiency
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
Y
J−mb
(Notes 1, 2, 3, and 4)
Steady
State
T
A
= 25°C
I
D
2.2
A
T
A
= 100°C 1.6
Power Dissipation
R
Y
J−mb
(Notes 1 and 3)
T
A
= 25°C
P
D
1.5 W
T
A
= 100°C 0.6
Continuous Drain
Current R
q
JA
(Note 1, 2, 3, and 4)
Steady
State
T
A
= 25°C
I
D
1.7
A
T
A
= 100°C 1.2
Power Dissipation R
q
JA
(Notes 1 and 3)
T
A
= 25°C
P
D
0.9 W
T
A
= 100°C 0.4
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
27 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
1.9 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
G
D
S
Device Package Shipping
ORDERING INFORMATION
60 V
205 mW @ 4.5 V
155 mW @ 10 V
R
DS(on)
TYP
2.2 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
1
3
N−Channel
NVR5198NLT1G SOT−23
(Pb−Free)
3000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
AAL = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
3
Drain
1
Gate
2
Source
AAL M G
G
NVR5198NLT3G SOT−23
(Pb−Free)
10000 /
Tape & Reel
www.onsemi.com
NVR5198NL
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Lead #3 − Drain (Notes 2 and 3)
R
Y
J−mb
86 °C/W
Junction−to−Ambient − Steady State (Note 3)
R
q
JA
139 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 250 mA
70 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
Reference to 25°C, I
D
= 250 mA
−6.5 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 1 A 107 155 mW
V
GS
= 4.5 V, I
D
= 1 A 142 205
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 1 A 3 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
182
pF
Output Capacitance C
oss
25
Reverse Transfer Capacitance C
rss
16
Total Gate Charge Q
G(TOT)
V
DS
= 48 V,
I
D
= 1 A
V
GS
= 4.5 V 2.8
nC
V
GS
= 10 V
5.1
Threshold Gate Charge Q
G(TH)
V
DS
= 48 V, I
D
= 1 A
V
GS
= 10 V
0.3
Gate−to−Source Charge Q
GS
0.8
Gate−to−Drain Charge Q
GD
1.5
Plateau Voltage V
GP
3.1 V
Gate Resistance R
G
8
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time t
d(on)
V
DS
= 30 V, V
GS
= 10 V,
I
D
= 1 A, R
G
= 10 W
5
ns
Rise Time t
r
7
Turn−Off Delay Time t
d(off)
13
Fall Time t
f
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 1 A
T
J
= 25°C 0.8 1.2
V
T
J
= 125°C 0.6
Reverse Recovery Time t
rr
I
S
= 1 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
12
ns
Charge Time t
a
9
Discharge Time t
b
3
Reverse Recovery Stored Charge Q
RR
6 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NVR5198NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
1
2
3
4
431
0
2
4
6
15
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
10987653
0.05
0.10
0.15
0.30
0.35
0.45
0.50
210
0.05
0.10
0.25
0.35
0.40
0.50
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
15012510050250−25−50
0.6
1.0
1.5
2.0
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (Normalized)
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
0.20
0.40
75
V
GS
= 4.5 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 150°C
T
J
= −55°C
I
D
= 1 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 1 A
V
GS
= 10 V
V
GS
= 6.0 V
V
GS
= 3.4 V
V
GS
= 3.2 V
V
GS
= 3.8 V
4
0.25
3
0.15
0.20
0.30
0.45
5
6
7
8
9
10
11
12
13
14
15
V
GS
= 5.0 V
V
GS
= 10 V
V
GS
= 3.6 V
V
GS
= 3.0 V
V
GS
= 4.0 V
25
1
3
5
7
8
10
12
9
11
13
14
5468791110 12 1413 15
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
1.7
1.8
1.9
100500−25−50
0.900
1.000
I
D
= 250 mA
25 75 125 150
0.925
0.950
0.975
1.025
1.050
1.075
1.100
1.125
1.150

NVR5198NLT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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