MBRA140T3G

© Semiconductor Components Industries, LLC, 2013
April, 2017 Rev. 11
1 Publication Order Number:
MBRA140T3/D
MBRA140, NRVBA140
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA & SBRA Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable*
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body
or Polarity Band
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
www.onsemi.com
SMA
CASE 403D
MARKING DIAGRAM
B14
AYWW G
B14 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
Device Package Shipping
ORDERING INFORMATION
MBRA140T3G SMA
(PbFree)
5,000 /
Tape & Reel
NRVBA140T3G* SMA
(PbFree)
5,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA140, NRVBA140
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 95°C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 100°C)
I
FRM
2.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
30
A
Storage Temperature T
stg
55 to +150 °C
Operating Junction Temperature T
J
55 to +125 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
R
q
JL
R
q
JA
35
86
°C/W
1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 1.0 A)
see Figure 2 for other Values (I
F
= 2.0 A)
V
F
T
J
= 25°C T
J
= 100°C
V
0.55
0.71
0.505
0.74
Maximum Instantaneous Reverse Current
(V
R
= 40 V)
see Figure 4 for other Values (V
R
= 20 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
0.5
0.1
10
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
MBRA140, NRVBA140
www.onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.4 1.00
0.1
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E-6
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
0.6 0.8 1.0 0.6 0.80.2
1.0
10
T
J
= 25°C
10 20
0 0.2 0.4
30
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= -40°C
10E-6
100E-6
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
1.0E-3
10E-3
100E-3
, REVERSE CURRENT (AMPS)
R
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E-6
I
10 20 30
10E-6
100E-6
T
J
= 25°C
T
J
= 85°C
1.0E-3
10E-3
100E-3
, MAXIMUM REVERSE CURRENT (AMPS)
R
1.2 1.2
40 40

MBRA140T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 40V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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