MB4M-G

FEATURES
- Rating to 1000V PRV
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
- Lead tin plated copper
MECHANICAL DATA
- Polarity:Symbol molded on body
- Weight: 0.0044 ounces,0.125 grams
- Mounting position :Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL MB05M MB1M MB2M MB4M MB6M MB8M MB10M UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
50
100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS
35
70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC
50
100 200 400 600 800 1000 V
Maximum Average Forward
Rectified Current (Note 1) @TA=40
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 0.8A DC VF V
Maximum DC Reverse Current @TJ=25
at Rated DC Bolcking Voltage @TJ=125
Typical Junction Capacitance Per Element (Note2) CJ pF
Typical Thermal Resistance (Note3) RθJC
/W
Operating Temperature Range TJ
Storage Temperature Range TSTG
IFSM A
Dimensions in inches and (millimeters)
0.8
REVERSE VOLTAGE - 50 to 1000 V
FORWARD CURRENT - 0.8 A
μA
AI(AV)
3.Thermal resistance junction to case.
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
IR
30
75
-55 to +150
-55 to +150
1.1
5.0
500
15
MBM
.019(0.5)
.031(0.8)
.006(.15)
.014(.35)
.177(4.5)
.217(5.5)
.217(5.5)
.256(6.5)
.035(0.9)
.051(1.3)
.146(3.7)
.165(4.2)
.090(2.3)
.106(2.7)
.090(2.3)
.106(2.7)
.177(4.5)
.193(4.9)
.019(0.5)
.031(0.8)
.106(2.7)
.090(2.3)
+
-
~ ~
C0.5
Glass Passivated Bridge Rectifiers
MB05M-G thru MB10M-G
"-G" : RoHS Device
MDS0912009A
Page 1
INSTANTANEOUS REVERSE CURRENT,(µA)
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
FIG.3-TYPICAL REVERSE CHARACTERISTICS
140
0.01
0.1
0
20 40
60 80 100
120
1.0
10
100
TJ=125°C
TJ=25°C
1
4 10
100
100
10
1.0
REVERSE VOLTAGE VOLTS
CAPACITANCE(PF)
FIG.5-TYPICAL JUNCTION CAPACITANCE
TJ=25°Cf=1MHZ
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
AMBIENT TEMPERATURE,
1.0
0.8
0.6
0.4
0.2
0.1
20
40
60
100
120 140
160
80
MOUNTED ON BOARD
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
NUMBER OF CYCLES AT 60HZ
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.2-MAXIMUM NON-REPETITVE
SURGE CURRENT
40
30
20
10
0
1 2 5 10 20
50
100
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0.01
0.1
1.0
10
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL FORWARD CHARACTERISTICS
TJ=25°C
PULSE WIDTH:300us
2% DUTY CYCLE
0 0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Silicon Bridge Rectifiers
RATINGS AND CHARACTERISTIC CURVES
MB05M-G thru MB10M-G
MDS0912009A
Page 2

MB4M-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Bridge Rectifiers DIODE RECT BRIDGE GPP 0.8A 400V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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