VEMD2003X01

VEMD2003X01, VEMD2023X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 04-Apr-13
1
Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD2003X01 and VEMD2023X01 are high speed and high
sensitive PIN photodiodes in a miniature surface mount
package (SMD) with dome lens and daylight blocking filter.
Filter is matched with IR emitters operating at wavelength of
830 nm to 950 nm. The photo sensitive area of the chip is
0.23 mm
2
.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
AEC-Q101 qualified
High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
Fast response times
Angle of half sensitivity: = ± 35°
Package matched with IR emitter series
VSMB2943X01
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
High speed photo detector
Infrared remote control
Infrared data transmission
Photo interrupters
IR touch panels
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
VEMD2003X01 VEMD2023X01
PRODUCT SUMMARY
COMPONENT I
ra
(μA) (deg)
0.5
(nm)
VEMD2003X01 10 ± 35 750 to 1050
VEMD2023X01 10 ± 35 750 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMD2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 7 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
250 K/W
VEMD2003X01, VEMD2023X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 04-Apr-13
2
Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
32 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
110nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
4pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.3 pF
Open circuit voltage E
e
= 1 mW/cm
2
, = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, = 950 nm I
k
10 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, = 950 nm TK
Ik
0.1 %/K
Reverse light current E
e
= 1 mW/cm
2
, = 950 nm, V
R
= 5 V I
ra
71014μA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity
p
940 nm
Range of spectral bandwidth
0.5
750 to 1050 nm
Rise time V
R
= 10 V, R
L
= 1 k, = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 k, = 820 nm t
f
100 ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.1
1
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
V
R
= 5 V
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
VEMD2003X01, VEMD2023X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 04-Apr-13
3
Document Number: 84147
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
0.2
0.4
0.6
0.8
1.0
1.2
600 700 800 900 1000 1100
21554
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C

VEMD2003X01

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60V 215mW 35Deg PIN Photodiode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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