www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94541
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 30-Jul-10
FB180SA10P
Vishay Semiconductors
Power MOSFET, 180 A
Not Available for New Designs, Use VS-FB190SA10
Note
(1)
Pulse width 300 μs, duty cycle 2 %
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
(2)
Pulse width 300 μs, duty cycle 2 %
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
thJC
-0.26
°C/W
Case to sink, flat, greased surface R
thCS
0.05 -
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(
BR)DSS
V
GS
= 0 V, I
D
= 250 μA 100 - - V
Breakdown voltage temperature
coefficient
V
(BR)DSS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.093 - V/°C
Static drain to source on-resistance R
DS(on)
(1)
V
GS
= 10 V, I
D
= 180 A - 0.0065 -
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Forward transconductance g
fs
V
DS
= 25 V, I
D
= 180 A 93 - - S
Drain to source leakage current I
DSS
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
--50
μA
- - 500
Gate to source forward leakage I
GSS
V
GS
= 20 V - - 200
nA
V
GS
= - 20 V - - - 200
Total gate charge Q
g
I
D
= 180 A
V
DS
= 80 V
V
GS
= 10.0 V; see fig. 6 and 13
(1)
- 250 380
nCGate to source charge Q
gs
-4060
Gate to drain ("Miller") charge Q
gd
- 110 165
Turn-on delay time t
d(on)
V
DD
= 50 V
I
D
= 180 A
R
g
= 2.0(internal)
R
D
= 0.27, see fig. 10
(1)
-45-
ns
Rise time t
r
-351-
Turn-off delay time t
d(off)
-181-
Fall time t
f
-335-
Internal source inductance L
S
Between lead, and center of die contact - 5.0 - nH
Input capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
- 10 700 -
pFOutput capacitance C
oss
- 2800 -
Reverse transfer capacitance C
rss
- 1300 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode)
I
S
MOSFET symbol
showing the integral
reverse p-n junction diode.
- - 180
A
Pulsed source current (body diode) I
SM
(1)
- - 720
Diode forward voltage V
SD
(2)
T
J
= 25 °C, I
S
= 180 A, V
GS
= 0 V - - 1.3 V
Reverse recovery time t
rr
(2)
T
J
= 25 °C, I
F
= 180 A; dI/dt = 100 A/μs
- 300 450 ns
Reverse recovery charge Q
rr
-2.63.9μC
Forward turn-on time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
S
D
G
