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BAV21WS-E3-08

P1-P3P4-P4
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 14-Oct-16
1
Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that leads are kept at ambient temperature
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAV19WS V
R
= 100 V
BAV19WS-E3-08 or BAV19WS-E3-18
BAV19WS-HE3-08 or BAV19WS-HE3-18
A8 Single diode Tape and reel
BAV20WS V
R
= 150 V
BAV20WS-E3-08 or BAV20WS-E3-18
BAV20WS-HE3-08 or BAV20WS-HE3-18
A9 Single diode Tape and reel
BAV21WS V
R
= 200 V
BAV21WS-E3-08 or BAV21WS-E3-18
BAV21WS-HE3-08 or BAV21WS-HE3-18
AA Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Continuous reverse voltage
BAV19WS V
R
100 V
BAV20WS V
R
150 V
BAV21WS V
R
200 V
Repetitive peak reverse voltage
BAV19WS V
RRM
120 V
BAV20WS V
RRM
200 V
BAV21WS V
RRM
250 V
Forward continuous current
(1)
I
F
250 mA
Rectified current (average) half wave
rectification with resistive load
(1)
I
F(AV)
200 mA
Repetitive peak forward current
(1)
f 50 Hz, = 180° I
FRM
625 mA
Surge forward current t < 1 s, T
J
= 25 °C I
FSM
1A
Power dissipation P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
625 K/W
Thermal resistance junction to lead R
thJL
450 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 14-Oct-16
2
Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA V
F
1V
I
F
= 200 mA V
F
1.25 V
Reverse leakage current
V
R
= 100 V BAV19WS I
R
100 nA
V
R
= 100 V, T
J
= 100 °C BAV19WS I
R
15 μA
V
R
= 150 V BAV20WS I
R
100 nA
V
R
= 150 V, T
J
= 100 °C BAV20WS I
R
15 μA
V
R
= 200 V BAV21WS I
R
100 nA
V
R
= 200 V, T
J
= 100 °C BAV21WS I
R
15 μA
Dynamic forward resistance I
F
= 10 mA r
f
5
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Reverse recovery time
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
t
rr
50 ns
18858
1000
100
10
1
0.1
0.01
I- Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
T
j
= 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.)
O
DC current I
F
200
18864
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation (mW)
tot
r - Dynamic Forward Resistance
f
(Ω)
10
100
1
1 10010
18861
I
F
- Forward Current (mA)
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 14-Oct-16
3
Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.1
18862_3
1
10
100
1000
0 40 80 120 160 200
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
T
j
- Junction Temperature (°C)
Reverse Voltage
BAV19WS V
R
= 100 V
BAV20WS V
R
= 150 V
BAV21WS V
R
= 200 V
18863
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
=25
°
CT
j
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
P1-P3P4-P4

BAV21WS-E3-08

Mfr. #:
Buy BAV21WS-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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