DISCRETE POWER AND SIGNAL
TECHNOLOGIES
FDH700
ULTRA FAST DIODE
© 1999 Fairchild Semiconductor Corporation
FDH700 - Rev. A
CATHODE
BAND
0.200 (5.08)
0.120 (3.05)
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
0.090 (2.28) Diameter
0.060 (1.53)
0.500 Minimum
12.70 Typ 1.000
LOGO
FD
H7
00
Absolute Maximum Ratings (note 1) TA = 25
O
C unless otherwise noted
Parameter Value Units
Storage Temperature -65 to +200
O
C
Maximum Junction Temperature -65 to +175
O
C
Total Power Dissipation at 25
O
C 250 mW
Derate above 25
O
C 1.67 mW/
O
C
Working Inverse Voltage 20 V
DC Forward Current 150 mA
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Electrical Characteristics TA = 25
O
C unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
B
V
Breakdown Voltage 30 V I
R
= 5.0 uA
I
R
Reverse Leakage 50 nA V
R
= 20 V
50 uA V
R
= 20 V T
A
= 150
O
C
V
F
Forward Voltage 420 500 mV I
F
= 10 uA
520 610 mV I
F
= 100 uA
640 740 mV I
F
= 1.0 mA
760 900 mV I
F
= 10 mA
810 990 mV I
F
= 20 mA
0.89 1.25 V I
F
= 50 mA
T
RR
Reverse Recovery Time 900 ps I
F
= I
R
= 10 mA I
RR
= 1.0 mA
R
Loop
= 100 Ohm
C
T
Diode Capacitance 1.5 pF V
R
= 0 V, f = 1.0 MHz
Information Only Data Sheet
FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY
