Product Standards
Transistors with Built-in Resistor
DRC2124X0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Marking Symbol:
NF
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
TO-236AA/SOT-23
Packaging
Mini3-G3-B
JEITA SC-59A
3. Collector
DRC2124X0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2124X
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
1of
R1 22
k
R2 47
k
3
Unit: mm
Min Typ
Internal Connection
Resistance
value
VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 200 mW
Junction temperature Tj 150 °C
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Max Unit
Collector-base voltage (Emitter open)
VCBO 50 IC = 10 μA, IE = 0 V
Input voltage
Collector-base cutoff current (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base cutoff current (Collector open)
Collector-emitter cutoff current (Base open)
0.5 μA
Resistance ratio
Input resistance
VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
Forward current transfer ratio
V
0.1 μA
VCEO IC = 2 mA, IB = 0 50
ICBO VCB = 50 V, IE = 0
IEBO VEB = 6 V, IC = 0
ICEO VCE = 50 V, IB = 0
hFE VCE = 10 V, IC = 5 mA 80
0.2 mA
400 -
0.25 VVCE(sat) IC = 10 mA, IB = 0.5 mA
Vi(on) VCE = 0.2 V, IC = 5 mA
0.6Vi(off)
V2.1
-30% 22 +30%
k
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
0.57 -R1/R2 0.37 0.47
V
R1
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
