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BFU710F,115

P1-P3P4-P6P7-P9P10-P12
BFU710F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 20 April 2011 7 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
V
CE
=2V; I
C
=2mA; T
amb
=25°C. V
CE
=2V; I
C
=9mA; T
amb
=25°C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25°C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
I
C
=2mA; V
CE
=2V; T
amb
=25°C.
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0252010 155
001aam848
20
30
10
40
50
G
(dB)
0
MSG
MSG
G
p(max)
IS21I
2
f (GHz)
0252010 155
001aam849
20
30
10
40
50
G
(dB)
0
MSG
MSG
G
p(max)
IS21I
2
I
C
(mA)
0108462
001aam850
1.0
0.5
1.5
2.0
NF
min
(dB)
0
(1)
(2)
(3)
(4)
(5)
f (GHz)
14102128406
001aam851
1.0
0.5
1.5
2.0
NF
min
(dB)
0
BFU710F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 20 April 2011 8 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
8. Package outline
Fig 11. Package outline SOT343F
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343
F
05-07-12
06-03-16
UNIT
A
max
mm
0.4
0.3
0.75
0.65
0.7
0.5
2.2
1.8
0.25
0.10
1.35
1.15
0.48
0.38
2.2
2.0
b
p
DIMENSIONS (mm are the original dimensions)
P
lastic surface-mounted flat pack package; reverse pinning; 4 leads
b
1
c D E e e
1
H
E
1.151.3
L
p
w y
0.10.2
0 1 2 mm
scale
detail X
L
p
c
A
E
X
H
E
D
A
y
b
p
b
1
e
1
e
wA
M
wA
M
12
34
BFU710F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 20 April 2011 9 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
AMR Automatic Meter Reading
DBS Direct Broadcast Satellite
DC Direct Current
DRO Dielectric Resonator Oscillator
FM Frequency Modulation
GPS Global Positioning System
LNA Low Noise Amplifier
Ka Kurtz above
LNB Low Noise Block
NPN Negative-Positive-Negative
RF Radio Frequency
RKE Remote Keyless Entry
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU710F v.1 20110420 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU710F,115

Mfr. #:
Buy BFU710F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lifecycle:
New from this manufacturer.
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