Si3443DVPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 51 77 ns T
J
= 25°C, I
F
= -1.7A
Q
rr
Reverse Recovery Charge ––– 30 44 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-20
-2.0
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25Ω, I
AS
= -3.0A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.034 0.065 V
GS
= -4.5V, I
D
= -4.4A
––– 0.053 0.090 Ω V
GS
= -2.7V, I
D
= -3.7A
––– 0.060 0.100 V
GS
= -2.5V, I
D
= -3.5A
V
GS(th)
Gate Threshold Voltage -0.60 ––– -1.2 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance ––– 12 ––– S V
DS
= -10V, I
D
= -4.4 A
––– ––– -1.0
µA
V
DS
= -20V, V
GS
= 0V
––– ––– -5.0 V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -12V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 12V
Q
g
Total Gate Charge ––– 11 15 I
D
= -4.4A
Q
gs
Gate-to-Source Charge ––– 2.2 ––– nC V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– V
GS
= -4.5V
t
d(on)
Turn-On Delay Time ––– 12 50 V
DD
= -10V, V
GS
= -4.5V
t
r
Rise Time ––– 33 60
ns
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 70 100 R
G
= 6.0 Ω
t
f
Fall Time ––– 72 100 R
D
= 10 Ω,
C
iss
Input Capacitance ––– 1079 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance ––– 152 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current