2N5194G Datasheet 2N5195G, 2N5194G | P1-P3

December, 2013 − Rev. 15

1 Publication Order Number:

2N5194/D

2N5194G, 2N5195G

Silicon PNP Power

Transistors

These devices are designed for use in power amplifier and switching

circuits; excellent safe area limits.

Features

• Complement to NPN 2N5191, 2N5192

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N5194G

2N5195G

V

CEO

60

80

Vdc

Collector−Base Voltage

2N5194G

2N5195G

V

CB

60

80

Vdc

Emitter−Base Voltage V

EB

5.0 Vdc

Collector Current I

C

4.0 Adc

Base Current I

B

1.0 Adc

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

40

320

W

W/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

–65 to +150 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC registered data.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

3.12 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

4 AMPERE

POWER TRANSISTORS

PNP SILICON

60 − 80 VOLTS

MARKING DIAGRAM

Y = Year

WW = Work Week

2N519x = Device Code

x = 4 or 5

G = Pb−Free Package

2N5195G TO−225

(Pb−Free)

500 Units / Bulk

Device Package

Shipping

2N5194G TO−225

(Pb−Free)

500 Units / Bulk

ORDERING INFORMATION

3

BASE

1

EMITTER

COLLECTOR

2, 4

TO−225

CASE 77−09

STYLE 1

1

2

3

YWW

2

N519xG

2N5194G, 2N5195G

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(I

C

= 0.1 Adc, I

B

= 0)

2N5194G

2N5195G

V

CEO(sus)

60

80

−

Vdc

Collector Cutoff Current

(V

CE

= 60 Vdc, I

B

= 0)

2N5194G

(V

CE

= 80 Vdc, I

B

= 0)

2N5195G

I

CEO

−

1.0

mAdc

Collector Cutoff Current

(V

CE

= 60 Vdc, V

BE(off)

= 1.5 Vdc)

2N5194G

(V

CE

= 80 Vdc, V

BE(off)

= 1.5 Vdc)

2N5195G

(V

CE

= 60 Vdc, V

BE(off)

= 1.5 Vdc, T

C

= 125_C)

2N5194G

(V

CE

= 80 Vdc, V

BE(off)

= 1.5 Vdc, T

C

= 125_C)

2N5195G

I

CEX

−

−0.1

0.1

2.0

mAdc

Collector Cutoff Current

(V

CB

= 60 Vdc, I

E

= 0)

2N5194G

(V

CB

= 80 Vdc, I

E

= 0)

2N5195G

I

CBO

−

0.1

mAdc

Emitter Cutoff Current

(V

BE

= 5.0 Vdc, I

C

= 0)

I

EBO

− 1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(I

C

= 1.5 Adc, V

CE

= 2.0 Vdc)

2N5194G

2N5195G

(I

C

= 4.0 Adc, V

CE

= 2.0 Vdc)

2N5194G

2N5195G

h

FE

25

20

10

7.0

100

80

−

Collector−Emitter Saturation Voltage (Note 3)

(I

C

= 1.5 Adc, I

B

= 0.15 Adc)

(I

C

= 4.0 Adc, I

B

= 1.0 Adc)

V

CE(sat)

−

0.6

1.4

Vdc

Base−Emitter On Voltage (Note 3)

(I

C

= 1.5 Adc, V

CE

= 2.0 Vdc)

V

BE(on)

− 1.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 1.0 Adc, V

CE

= 10 Vdc, f = 1.0 MHz)

f

T

2.0 −

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC registered data.

3. Pulse Test: Pulse Width ≤ 300Ăms, Duty Cycle ≤Ă2.0%.

2N5194G, 2N5195G

http://onsemi.com

3

Figure 1. DC Current Gain

I

C

, COLLECTOR CURRENT (AMP)

10

0.1

0.004

7.0

5.0

1.0

0.7

0.5

0.3

0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0

V

CE

= 2.0 V

V

CE

= 10 V

2.0 3.0

T

J

= 150°C

-55°C

25°C

3.0

2.0

0.2

h

FE

, DC CURRENT GAIN (NORMALIZED)V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Collector Saturation Region

I

B

, BASE CURRENT (mA)

2.0

0

0.05

1.6

1.2

0.8

0.4

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500

I

C

= 10 mA

5.0 7.0 20 30 50 70 100 200 300

100 mA 1.0 A 3.0 A

T

J

= 25°C

2.0

0.005

I

C

, COLLECTOR CURRENT (AMP)

0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0

1.6

1.2

0.8

0.4

0

T

J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

VOLTAGE (VOLTS)

Figure 3. “On” Voltage

0.1 0.5 3.0

V

BE

@ V

CE

= 2.0 V

+2.5

Figure 4. Temperature Coefficients

I

C

, COLLECTOR CURRENT (AMP)

*APPLIES FOR I

C

/I

B

≤ h

FE

@ V

CE

T

J

= -65°C to +150°C

V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.0

+1.5

+0.5

0

-0.5

-1.0

-1.5

-2.0

-2.5

qV

B

for V

BE

*qV

C

for V

CE(sat)

+1.0

0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0

2N5194G

2N5194G

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