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IRLR3714TRL

P1-P3P4-P6P7-P9P10-P11
IRLR3714/IRLU3714
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0.0 1.0 2.0 3.0
V
SD
, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I
SD
, Reverse Drain Current (A)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
0 4 8 12 16 20
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
14A
V = 10V
DS
V = 16V
DS
IRLR3714/IRLU3714
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
T , Case Temperature
(
C
)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRLR3714/IRLU3714
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
5.9A
10A
14A
P1-P3P4-P6P7-P9P10-P11

IRLR3714TRL

Mfr. #:
Buy IRLR3714TRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 36A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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