IRLR3714/IRLU3714
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
–––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
–––
p-n junction diode.
––– ––– 1.3 V T
J
= 25°C, I
S
= 18A, V
GS
= 0V
––– 0.88 ––– T
J
= 125°C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 35 53 ns T
J
= 25°C, I
F
= 18A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 35 53 ns T
J
= 125°C, I
F
= 18A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 15 20 V
GS
= 10V, I
D
= 18A
––– 21 28 V
GS
= 4.5V, I
D
= 14A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 100 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 72 mJ
I
AR
Avalanche Current ––– 14 A
Avalanche Characteristics
S
D
G
Diode Characteristics
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 17 ––– ––– SV
DS
= 10V, I
D
= 14A
Q
g
Total Gate Charge ––– 6.5 9.7 I
D
= 14A
Q
gs
Gate-to-Source Charge ––– 1.8 ––– nC V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 7.1 ––– V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time ––– 8.7 ––– V
DD
= 10V
t
r
Rise Time ––– 78 ––– I
D
= 14A
t
d(off)
Turn-Off Delay Time ––– 10 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 4.5 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 670 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 470 ––– V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
36
140
mΩ