IAUT300N10S5N015ATMA1

P1-P3 P4-P6 P7-P9

IAUT300N10S5N015

OptiMOS™-5 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

300 A

T

C

=100 °C,

V

GS

=10 V

2)

247

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

1200

Avalanche energy, single pulse

2)

E

AS

I

D

=150 A

652 mJ

Avalanche current, single pulse

I

AS

-

300 A

Gate source voltage

V

GS

-±20V

Power dissipation

P

tot

T

C

=25 °C

375 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

100 V

R

DS(on)

1.5

m

I

D

300 A

Product Summary

Type Package Marking

IAUT300N10S5N015 P/G-HSOF-8-1 5N10015

P/G-HSOF-8-1

8

1

1

8

Tab

Tab

R

ev. 1.0 page 1 2017-10-02

IAUT300N10S5N015

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

---0.4K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V,

I

D

=1 mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=275 µA

2.2 3.0 3.8

Zero gate voltage drain current

I

DSS

V

DS

=100 V, V

GS

=0 V,

T

j

=25 °C

-0.11µA

V

DS

=50 V, V

GS

=0 V,

T

j

=85 °C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=6 V, I

D

=75 A

-1.62.0mΩ

V

GS

=10 V, I

D

=100 A

-1.31.5

Values

R

ev. 1.0 page 2 2017-10-02

IAUT300N10S5N015

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 12316 16011 pF

Output capacitance

C

oss

- 1920 2496

Reverse transfer capacitance

C

rss

- 84 126

Turn-on delay time

t

d(on)

-29-ns

Rise time

t

r

-15-

Turn-off delay time

t

d(off)

-70-

Fall time

t

f

-48-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-5268nC

Gate to drain charge

Q

gd

-3350

Gate charge total

Q

g

- 166 216

Gate plateau voltage

V

plateau

-4.4-V

Reverse Diode

Diode continous forward current

2)

I

S

- - 300 A

Diode pulse current

2)

I

S,pulse

- - 1200

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=100 A,

T

j

=25 °C

-0.91.3V

Reverse recovery time

2)

t

rr

-90-ns

Reverse recovery charge

2)

Q

rr

- 220 - nC

Values

V

GS

=0 V, V

DS

=50 V,

f=1 MHz

V

DD

=50 V, V

GS

=10 V,

I

D

=100 A, R

G

=3.5 

V

DD

=50 V, I

D

=100 A,

V

GS

=0 to 10 V

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by electromigration; with an R

thJC

= 0.4 K/W the chip is able to carry 350A at 25°C.

V

R

=50 V, I

F

=50A,

di

F

/dt=100 A/µs

T

C

=25 °C

R

ev. 1.0 page 3 2017-10-02

P1-P3 P4-P6 P7-P9

IAUT300N10S5N015ATMA1

Mfr. #:

Buy IAUT300N10S5N015ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFET_(75V,120V(

Lifecycle:

New from this manufacturer.

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IAUT300N10S5N015ATMA1