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NTR3A30PZT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 2
1 Publication Order Number:
NTR3A30PZ/D
NTR3A30PZ
Power MOSFET
−20 V, −5.5 A, Single P−Channel
2.4 x 2.9 x 1.0 mm SOT−23 Package
Features
• Low R
DS(on)
Solution in 2.4 mm x 2.9 mm Package
• ESD Diode−Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8 V
Drain Current (Note 1)
Drain Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.0
A
T
A
= 85°C −2.2
t ≤ 5 s T
A
= 25°C −5.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.48
W
t ≤ 5 s 1.58
Pulsed Drain Current
t
p
= 10 ms
I
DM
−9.1 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
ESD HBM, JESD22−A114 V
ESD
2000 V
Source Current (Body Diode) (Note 2) I
S
−0.48 A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
260
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
79
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [2 oz] including traces).
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
Device Package Shipping
†
ORDERING INFORMATION
−20 V
38 mW @ −4.5 V
R
DS(on)
Max
−5.5 A
I
D
MAXV
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR3A30PZT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
P−Channel MOSFET
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
TRH = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
TRH M G
G
1
Gate
2
Source
Drain
3
50 mW @ −2.5 V
73 mW @ −1.8 V
D
S
G
1
3
2
www.onsemi.com
NTR3A30PZ
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
10.5 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C
−1
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5 V ±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −0.65 −1.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
10.5 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V I
D
= −3 A 31 38 mW
V
GS
= −2.5 V I
D
= −2.5 A 36 50
V
GS
= −1.8 V I
D
= −1.5 A 51 73
Forward Transconductance g
FS
V
DS
= −5 V, I
D
= −3 A 30 S
CHARGES AND CAPACITANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= −15 V
1651
pF
Output Capacitance C
oss
148
Reverse Transfer Capacitance C
rss
129
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −15 V, I
D
= −3 A
17.6
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
2.4
Gate−to−Drain Charge Q
GD
4.9
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= −4.5 V, V
DS
= −15 V,
I
D
= −3 A, R
G
= 6.0 W
100
ns
Rise Time t
r
208
Turn−Off Delay Time t
d(off)
1043
Fall Time t
f
552
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −0.4 A
T
J
= 25°C 0.65 1.0
V
T
J
= 125°C 0.47
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR3A30PZ
www.onsemi.com
3
TYPICAL CHARACTERISTICS
−6 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4.03.02.52.01.51.00.50
0
2
6
8
12
14
18
20
2.52.01.51.00.5
0
2
4
6
8
14
18
20
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
4.0 4.53.53.02.52.01.51.0
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.12
5421
0.026
0.036
0.056
0.066
0.096
0.106
0.156
0.166
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
181412108642
100
1000
10,000
100,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
−I
DSS
, LEAKAGE (nA)
3.5 4.5
4
10
16
V
GS
= −1.4 V
−1.6 V
−1.8 V
−2.5 V
−3 V
10
12
16
V
DS
≤ −5 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
0.09
0.10
0.11
T
J
= 25°C
I
D
= −3.0 A
36
0.136
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
V
GS
= −1.8 V
V
GS
= −4.5 V
150 16 20
V
GS
= −4.5 V
I
D
= −3.0 A
T
J
= 150°C
T
J
= 125°C
0.046
0.076
0.086
0.126
0.146
0.116
V
GS
= −2.5 V
P1-P3P4-P6

NTR3A30PZT1G

Mfr. #:
Buy NTR3A30PZT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET SOT23 20V 2.9A 38MOH
Lifecycle:
New from this manufacturer.
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