94 EE-SX198 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX198
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• General-purpose model with a 3-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Four, C0.3
Four, 0.5±0.1
Four, 0.25±0.1
Two, C1±0.3
Optical
axis
Cross section BB
Cross section AA
6.5+0.1
2.5±0.1
6.2±0.5
0.5±0.1
8.5±0.1
5±0.1
12.2±0.3
10±0.2
9.2±0.3
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to
100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage V
F
1.2 V typ., 1.4 V max. I
F
= 30 mA
Reverse current I
R
0.01 μA typ., 10 μA max. V
R
= 4 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
0.5 mA min., 14 mA max. I
F
= 20 mA, V
CE
= 5 V
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 20 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated volt-
age
V
CE
(sat) 0.1 V typ., 0.4 V max. I
F
= 40 mA, I
L
= 0.5 mA
Peak spectral sensitivity wave-
length
λ
P
850 nm typ. V
CE
= 10 V
Rising time tr 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Falling time tf 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Be sure to read Precautions on page 25.
