KSC1187YTA

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC1187

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 30 V

V

CEO

Collector-Emitter Voltage 20 V

V

EBO

Emitter-Base Voltage 4 V

I

C

Collector Current 30 mA

P

C

Collector Power Dissipation 250 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=10µA, I

E

=0 30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 25 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 4 V

I

CBO

Collector Cut-off Current V

CB

=20V, I

E

=0 0.1 µA

h

FE

DC Current Gain V

CE

=10V, I

C

=2mA 40 240

f

T

Current Gain Bandwidth Product V

CE

=10V, I

C

=3mA 400 700 MHz

C

RE

Reverse Transfer Capacitance V

CB

=10V, I

E

=0, f=1MHz 0.6 pF

G

PE

Power Gain V

CE

=10V, I

C

=3mA

f=45MHz

20 24 dB

V

AGC

AGC Voltage G

R

= 30dB, f=45MHz 4.4 5.2 6.0 V

Classification R O Y

h

FE

40 ~ 80 70 ~ 140 120 ~ 240

KSC1187

TV 1st, 2nd Picture IF Amplifier

(Forward AGC)

• High Current Gain Bandwidth Product : f

T

=700MHz

• High Power Gain : G

PE

=24dB (TYP.) at f=45MHz

1. Emitter 2. Base 3. Collector

TO-92

1

©2001 Fairchild Semiconductor Corporation

KSC1187

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Reverse Capacitance

Figure 5. Current Gain Bandwidth Product

0246810

0

2

4

6

8

10

I

B

= 100uA

I

B

= 90uA

I

B

= 80uA

I

B

= 70uA

I

B

= 60uA

I

B

= 50uA

I

B

= 40uA

I

B

= 30uA

I

B

= 20uA

I

B

= 10uA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 100

1

10

100

1000

V

CE

= 10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

V

BE

(sat)

V

CE

(sat)

I

C

=10I

B

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

1 10 100

0.1

1

f=1MHz

I

E

=0

C

re

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0.1 1 10

100

1000

V

CE

=10V

f

T

[MHz],

CURRENT GAIN-BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC1187

Dimensions in Millimeters

KSC1187YTA

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Transistor

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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