©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSB798 Rev. B1
KSB798 PNP Epitaxial Silicon Transistor
July 2005
KSB798
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier
• Collector Current : I
C
= -1A
• Collector Power Dissipation : P
C
= 2W
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
* PW ≤ 10ms, Duty cycle ≤ 50%
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -1.0 A
I
CP
Collector Current (Pulse) * -1.5 A
P
C
Collector Power Dissipation 2.0 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100µA, I
C
= 0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -0.1 µA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -0.1 µA
h
FE1
h
FE2
DC Current Gain V
CE
= -1V, I
C
= -0.1A
V
CE
= -1V, I
C
= -1.0A
90
50
400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -0.1A -0.4 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -0.1A -1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -6V, I
C
= -10mA -0.6 -0.7 V
f
T
Current Gain Bandwidth Product V
CE
= -6V, I
C
= -10mA 110 MHz
C
ob
Output Capacitance V
CB
= -6V, I
E
= 0, f = 1MHz 18 pF
SOT-89
1
1. Base 2. Collector 3. Emitter
79 8
PY WW
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FE
grage
Year co d e
Weekly code
Marking
