2
Absolute Maximum Rating
[1]
T
A
= 25°C
Symbol Parameter Units Absolute Max.
Vdd Device Drain to Source Voltage
[2]
V 3.6
Idd Drain Current
[2]
mA 15
P
in,max
CW RF Input Power
(Vdd = 2.8V, Idd = 6mA)
dBm 13
P
diss
Total Power Dissipation
[4]
mW 54
T
L
Operating Temperature °C -40 to 85
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Thermal Resistance
[3]
(Vdd = 2.8 V, Idd = 6mA)
jc
= 82.1°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. Board (module belly) temperature TB is 25°C.
Derate 4.2 mW/°C for TB > 145.6°C.
Electrical Speci cations
T
A
= 25°C, Freq = 1.575GHz, measured on demo board
[1]
unless otherwise speci ed – Typical Performance
[1]
Table 1. Performance at Vdd = Vsd = 2.8V, Idd = 6.8mA (R2 = 3.9k Ohm, see Fig 1) nominal operating conditions
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 16.5 19.1 –
NF Noise Figure dB – 1.66 2.3
IP1dB Input 1dB Compressed Power dBm – -8 –
IIP3
[2]
Input 3
rd
Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm – +2 –
S11 Input Return Loss dB – -10 –
S22 Output Return Loss dB – -15 –
S12 Reverse Isolation dB – -30 –
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 78 96.6 –
PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 78 91.7 –
IP1dB
890MHz
Input 1dB gain compression interferer signal level at 890MHz dBm 29
IP1dB
1885MHz
Input 1dB gain compression interferer signal level at 1885MHz dBm 26
Idd Supply DC current at Shutdown (SD) voltage Vsd = 2.8V mA – 6.8 11.5
Ish Shutdown Current @ VSD = 0V uA – 0.5 –
Table 2. Performance at Vdd = Vsd = 1.8V, Idd = 4mA (R2 = 3.9k Ohm, see Fig 1) nominal operating conditions
Symbol Parameter and Test Condition Units Typ
G Gain dB 16.5
NF Noise Figure dB 1.9
IP1dB Input 1dB Compressed Power dBm -11
IIP3
[2]
Input 3
rd
Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm -1
S11 Input Return Loss dB -9
S22 Output Return Loss dB -13
S12 Reverse Isolation dB -29
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc >90
PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc >85
IP1dB
890MHz
Input 1dB gain compression interferer signal level at 890MHz dBm 29
IP1dB
1885MHz
Input 1dB gain compression interferer signal level at 1885MHz dBm 26
Idd Supply DC current at Shutdown (SD) voltage Vsd = 1.8V mA 4
Ish Shutdown Current @ VSD = 0V uA 0.5
Notes:
1. Measurements at 1.575GHz obtained using schematic described in Figure 1 below.
2. 1.575GHz IIP3 test condition: F
RF1
= 1572.5 MHz, F
RF2
= 1577.5 MHz with input power of -20dBm per tone measured at the worst case side band.
