APT8075BN Datasheet APT8075BN | P1-P3

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

(V

GS

= 0V, I

D

= 250 µA)

On State Drain Current

2

(V

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D

[Cont.])

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 1.0mA)

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

Characteristic

Junction to Case

Junction to Ambient

MIN TYP MAX

0.40

40

UNIT

°C/W

Symbol

BV

DSS

I

D

(ON)

R

DS

(ON)

I

DSS

I

GSS

V

GS

(TH)

MIN TYP MAX

APT8075BN

800

APT8090BN 800

APT8075BN 13

APT8090BN 12

APT8075BN 0.75

APT8090BN 0.90

250

1000

±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

APT APT

8075BN 8090BN

800 800

13 12

56 48

±30

310

2.48

-55 to 150

300

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT8075BN 800V 13.0A 0.75

ΩΩ

Ω

APT8090BN 800V 12.0A 0.90

ΩΩ

Ω

N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV

®

050-8007 Rev C

TO-247

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

G

D

S

MIN TYP MAX

310

APT8075BN 56

APT8090BN 48

MIN TYP MAX

APT8075BN 13

APT8090BN 12

APT8075BN 56

APT8090BN 48

1.3

656 1200

6.2 12

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

R

G

= 1.8Ω

MIN TYP MAX

2410 2950

370 520

120 180

88 130

8.9 13

44 67

13 27

18 36

62 94

24 48

UNIT

pF

nC

ns

APT8075/8090BN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions / Part Number

Continuous Source Current

(Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D

[Cont.])

Reverse Recovery Time (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D

[Cont.], dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

UNIT

Amps

Volts

ns

µC

Test Conditions / Part Number

V

DS

= 0.4 V

DSS

, I

DS

= P

D

/ 0.4 V

DSS

, t = 1 Sec.

I

DS

= I

D

[Cont.], V

DS

= P

D

/ I

D

[Cont.], t = 1 Sec.

Symbol

SOA1

SOA2

I

LM

Characteristic

Safe Operating Area

Inductive Current Clamped

UNIT

Watts

Amps

SAFE OPERATING AREA CHARACTERISTICS

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-8007 Rev C

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

0.5

0.1

0.05

0.01

0.005

0.001

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

050-8007 Rev C

DS D DS

V > I (ON) x R (ON)MAX.

230µ SEC. PULSE TEST

2.5

20

0

2

4

68

8

16

12

0.7

0.9

0.8

1.0

1.1

1.2

0

25 50 75 100 125 150

0.0

2.5

2.0

1.5

1.0

0.5

2.0

1.5

1.0

0.5

0.0

4

8

16

12

4

0.6

0.4

1.4

0.8

1.0

1.2

0

T

J

= -55°C

T

J

= +25°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C

T

J

= -55°C

2

46810

12

4.5V

4V

5V

5.5V

6V

16

8

0

4

12

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150

V

GS

=10V

V

GS

=20V

0 10 20 30 40

4

8

12

16

APT8090BN

APT8075BN

0 50 100 150 200 250

V

GS

=6V &10V

4V

4.5V

5V

5.5V

V

GS

=10V

APT8075/8090BN

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

T

J

= 25°C

2µ SEC. PULSE TEST

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

Page 146

APT8075BN

APT8075BN

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