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PBSS4130T,215

P1-P3P4-P6P7-P8
2003 Nov 27 3
Philips Semiconductors Product specification
30 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4130T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 30 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 1A
I
CM
peak collector current − 3A
I
BM
peak base current − 300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
amb
≤ 25 °C; note 2 − 480 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
2003 Nov 27 4
Philips Semiconductors Product specification
30 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4130T
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
=30V; I
E
=0 −−100 nA
V
CB
=30V; I
E
= 0; T
j
= 150 °C −−50 µA
I
EBO
emitter-base cut-off current V
EB
=4V; I
C
=0 −−100 nA
h
FE
DC current gain V
CE
=2V; I
C
= 100 mA 350 470 −
V
CE
=2V; I
C
= 500 mA 300 450 −
V
CE
=2V; I
C
= 1 A 300 420 −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
=1mA −−90 mV
I
C
= 500 mA; I
B
=50mA −−120 mV
I
C
= 750 mA; I
B
=15mA −−220 mV
I
C
= 1 A; I
B
= 50 mA; note 1 −−270 mV
R
CEsat
equivalent on-resistance I
C
= 500 mA; I
B
= 50 mA; note 1 −−240 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA; note 1 −−1.1 V
V
BEon
base-emitter turn-on voltage V
CE
=2V; I
C
= 100 mA −−0.75 V
f
T
transition frequency I
C
= 100 mA; V
CE
=10V;
f = 100 MHz
100 −−MHz
C
c
collector capacitance V
CB
=10V; I
E
=I
e
= 0; f = 1 MHz −−20 pF
2003 Nov 27 5
Philips Semiconductors Product specification
30 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS4130T
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
P1-P3P4-P6P7-P8

PBSS4130T,215

Mfr. #:
Buy PBSS4130T,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN 30V 1A LOW SAT
Lifecycle:
New from this manufacturer.
Delivery:
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