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GF1JHE3/5CA

P1-P3P4-P4
GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
1
Document Number: 88617
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
30 A
V
F
1.1 V, 1.2 V
I
R
5.0 μA
T
J
max. 175 °C
Package DO-214BA (GF1)
Diode variations Single die
DO-214BA (GF1)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Device marking code GA GB GD GG GJ GK GM
Max. repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Max. RMS voltage V
RMS
35 70 140 280 420 560 700 V
Max. DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Max. average forward rectified current at T
L
= 125 °C I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
2
Document Number: 88617
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Max. instantaneous forward
voltage
1.0 A V
F
1.1 1.2 V
Max. DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 50
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
2.0 μs
Typical junction capacitance 4.0 V, 1 MHz C
J
15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT
Typical thermal resistance
(1)
R
JA
80
°C/W
R
JL
26
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GF1J-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel
GF1J-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel
GF1JHE3/67A
(1)
0.104 67A 1500 7" diameter plastic tape and reel
GF1JHE3/5CA
(1)
0.104 5CA 6500 13" diameter plastic tape and reel
0
100
130110 120
140 150 160 180
0.50
1.00
60 Hz Resistive or Inductive Load
Lead Temperature (°C)
1.25
0.75
0.25
170
Average Forward Rectified Current (A)
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
t
p
, Pulse Width (ms)
Peak Forward Surge Current (A)
0.1
10
100
1000
10
1
Sine waveform,
T
A
= 25 °C
GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
3
Document Number: 88617
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10
1
0.1
0.01
0.4 0.6 1.4 1.60.8 1.0 1.2
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1
1
10
0.01
200 10040 60 80
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1
100
10
30
1
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 100
10
100
0.1
0.1 1 10
1
Mounted on
0.2" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.
P1-P3P4-P4

GF1JHE3/5CA

Mfr. #:
Buy GF1JHE3/5CA
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 1.0 Amp Glass Passivated
Lifecycle:
New from this manufacturer.
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