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STPS2H100ZFY

P1-P3P4-P6P7-P8
October 2016
DocID029482 Rev 1
1/8
This is information on a product in full production.
www.st.com
STPS2H100ZFY
Automotive high voltage power Schottky rectifier
Datasheet - production data
Features
AEC-Q101 qualified
High junction temperature capability
Low leakage current
Negligible switching losses
Avalanche capability specified
ECOPACK
®
2 compliant component
PPAP capable
Description
Single chip Schottky rectifiers suited to
automotive applications, such as lighting, diesel
injection, or engine control unit.
Packaged in SOD123Flat, this device is
especially intended for surface mounting and
used in high frequency converters, free wheeling
and reverse polarity protection in automotive
applications.
Table 1: Device summary
Symbol
I
F(AV)
2 A
V
RRM
100 V
V
F
(typ.)
0.65 V
T
j
(max.)
175 °C
K
A
SOD123Flat
A
K
Characteristics
STPS2H100ZFY
2/8
DocID029482 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
T
j
= -40 °C to +175 °C
100
V
I
F(AV)
Average forward current
δ = 0.5, square wave
T
L
= 140 °C
2
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
50
A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
105
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
(1)
-40 to +175
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-l)
Junction to lead
20
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
1
µA
T
j
= 125 °C
-
0.2
0.5
mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
-
0.86
V
T
j
= 125 °C
-
0.65
0.70
T
j
= 25 °C
F
= 4 A
-
0.96
T
j
= 125 °C
-
0.75
0.83
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.57 x I
F(AV)
+ 0.065 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power
losses.
AN604 (Calculation of conduction losses in a power rectifier)
AN4021 (Calculation of reverse losses in a power diode)
STPS2H100ZFY
Characteristics
DocID029482 Rev 1
3/8
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5 δ = 1
T
δ
= tp/T
tp
I
F(AV)
(A)
P
F(AV)
(W)
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
I
F(AV)
(A)
T
amb
(°C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
Z
th(j-l)
/R
th(j-l)
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 10 20 30 40 50 60 70 80 90 100
T
j
= 150 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 50 °C
T
j
= 75 °C
I
R
(µA)
V
R
(V)
10
100
1 10 100
F = 1MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
C(pF)
V
R
(V)
P1-P3P4-P6P7-P8

STPS2H100ZFY

Mfr. #:
Buy STPS2H100ZFY
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive high voltage power Schottky rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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