APT2X40DC120J

APT2X41DC120J
APT2X40DC120J
APT2X41_40DC120J – Rev 1 October, 2012
www.microsemi.com
1
4
ISOTOP
Absolute maximum ratings (per leg)
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
I
F(AV)
Maximum Average Forward Current
Duty cycle = 50% T
C
= 100°C 40
I
FSM
Non-Repetitive Forward Surge Current 10 µs
T
C
= 25°C
500
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APT2X60DC120J
Anti-Parallel
4
32
1
41
APT2X61DC120J
Parallel
23
Application
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
ISOTOP
®
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
ISOTOP
®
SiC Diode
Power Module
3
4
1
2
V
RRM
= 1200V
I
F
= 40A @ T
C
= 100°C
Anti-Parallel
APT2X40DC120J
Parallel
APT2X41DC120J
APT2X41DC120J
APT2X40DC120J
APT2X41_40DC120J – Rev 1 October, 2012
www.microsemi.com
2
4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.6 1.8
V
F
Diode Forward Voltage I
F
= 40A
T
j
= 175°C 2.3 3.0
V
T
j
= 25°C 128 800
I
RM
Maximum Reverse Leakage Current V
R
= 1200V
T
j
= 175°C 224 4000
µA
Q
C
Total Capacitive Charge
I
F
= 40A, V
R
= 600V
di/dt =2000A/µs
160 nC
f = 1MHz, V
R
= 200V 384
C Total Capacitance
f = 1MHz, V
R
= 400V 276
pF
Thermal and package characteristics (per leg)
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 0.39
R
thJA
Junction to Ambient (IGBT & Diode) 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 175
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
4
2
1
3
APT2X41DC120J
APT2X40DC120J
APT2X41_40DC120J – Rev 1 October, 2012
www.microsemi.com
3
4
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
20
40
60
80
00.511.522.533.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
100
200
300
400
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
400
800
1200
1600
2000
2400
2800
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
ISOTOP® is a registered trademark of ST Microelectronics NV

APT2X40DC120J

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Schottky Diodes & Rectifiers Power Module - SiC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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