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STH13009

P1-P3P4-P6P7-P9
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
October 2007 Rev 1 1/9
9
STH13009
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
Applications
■ Switching mode power supplies
Description
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds anh high voltage capability.
It uses a Hollow Emitter structure to enhance
switching speeds.
.
Figure 1. Internal schematic diagram
TO-220
1
2
3
www.st.com
Table 1. Device summary
Order code Marking Package Packaging
STH13009 H13009 TO-220 Tube
Obsolete Product(s) - Obsolete Product(s)
Absolute maximum ratings STH13009
2/9
1 Absolute maximum ratings
Table 3. Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CEV
Collector-emitter voltage (V
BE
= -1.5V) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage (I
C
= 0) 12 V
I
C
Collector current 12 A
I
CM
Collector peak current (t
p
< ms) 24 A
I
B
Base current 6 A
I
BM
Base peak current (t
p
< ms) 12 A
P
TOT
Total dissipation at T
case
= 25°C 100 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Symbol Parameters Value Unit
R
thj-case
Thermal resistance junction-case __max 1.25 °C/W
Obsolete Product(s) - Obsolete Product(s)
STH13009 Electrical characteristics
3/9
2 Electrical characteristics
(T
case
= 25°C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEV
Collector cut-off current
(V
BE
= -1.5V)
V
CE
= 700 V
V
CE
= 700 V T
C
= 100°C
10
500
µA
µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 10 V
10 µA
V
CEO(sus)
(1)
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 10 mA
400 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 4 A __ I
B
= 0.8 A
I
C
= 5 A __ I
B
= 1 A
I
C
= 8 A __ I
B
= 1.6 A
I
C
= 12 A _ I
B
= 2.4 A
0.2
0.25
0.35
0.6
0.5
0.6
1
2
V
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 5 A __ I
B
= 1 A
I
C
= 8 A __ I
B
= 1.6 A
1.2
1.6
V
V
h
FE
(1)
DC current gain
I
C
= 5 A _ V
CE
=5 V
I
C
= 8 A _ V
CE
=5 V
18
11
30
23
t
s
t
f
Inductive load
Storage time
Fall time
V
CC
= 250 V I
C
= 5A
I
B1
= 1 A I
B2
= -2 A
L = 200 µH
1.7
100
2.5
140
µs
ns
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9

STH13009

Mfr. #:
Buy STH13009
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT HI VT FS SWCH PW TRN NPN
Lifecycle:
New from this manufacturer.
Delivery:
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