SiSS10DN
www.vishay.com
Vishay Siliconix
S16-0219-Rev. A, 08-Feb-16
1
Document Number: 65439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 40 V (D-S) MOSFET
Ordering Information:
SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• Optimized Q
g
, Q
gd
, and Q
gd
/Q
gs
ratio
reduces switching related power loss
• 100 % R
g
and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
• Battery management
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() (MAX.) I
D
(A)
a, g
Q
g
(TYP.)
40
0.00265 at V
GS
= 10 V 60
23 nC
0.00360 at V
GS
= 4.5 V 60
PowerPAK
®
1212-8S
Top View
1
3.3 mm
3.3 mm
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
+20, -16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
60
g
A
T
C
= 70 °C 60
g
T
A
= 25 °C 31.7
b, c
T
A
= 70 °C 25
b, c
Pulsed Drain Current (t = 100 μs) I
DM
150
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
51.8
T
A
= 25 °C 4.3
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
30
Single Pulse Avalanche Energy E
AS
45 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
57
W
T
C
= 70 °C 36
T
A
= 25 °C 4.8
b, c
T
A
= 70 °C 3
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
21 26
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.7 2.2