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PMBT2907AYSX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
NXP Semiconductors
PMBT2907A
YS
60V
, 600 mA, double PNP switching transistor
PMBT2907AYS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
26 June 2015
6 / 15
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Per transistor
V
CB
= -50 V; I
E
= 0 A; T
amb
= 25 °C
-
-
-10
nA
I
CBO
collector-base cut-off
current
V
CB
= -50 V; I
E
= 0 A; T
j
= 125 °C
-
-
-10
µA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
-50
nA
V
CE
= -10 V; I
C
= -0.1 mA; T
amb
= 25 °C
75
-
-
V
CE
= -10 V; I
C
= -1 mA; T
amb
= 25 °C
100
-
-
V
CE
= -10 V; I
C
= -10 mA; T
amb
= 25 °C
100
-
-
V
CE
= -10 V; I
C
= -150 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
100
-
300
h
FE
DC current gain
V
CE
= -10 V; I
C
= -500 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
50
-
-
I
C
= -150 mA; I
B
= -15 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
-
-
-400
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
-
-
-1.6
V
I
C
= -150 mA; I
B
= -15 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
-
-
-1.3
V
V
BEsat
base-emitter saturation
voltage
I
C
= -500 mA; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
-
-
-2.6
V
t
d
delay time
-
-
12
ns
t
r
rise time
-
-
30
ns
t
on
turn-on time
-
-
40
ns
t
s
storage time
-
-
300
ns
t
f
fall time
-
-
65
ns
t
off
turn-off time
I
C
= -150 mA; I
Bon
= -15 mA;
I
Boff
= 15 mA; T
amb
= 25 °C
-
-
365
ns
C
C
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
-
8
pF
C
E
emitter capacitance
V
EB
= -2 V; I
C
= 0 A; i
c
= 0 A; f = 1 MHz;
T
amb
= 25 °C
-
-
30
pF
f
T
transition frequency
V
CE
= -20 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
200
-
-
MHz
NXP Semiconductors
PMBT2907A
YS
60V
, 600 mA, double PNP switching transistor
PMBT2907AYS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
26 June 2015
7 / 15
aaa-014480
200
100
300
400
h
FE
0
I
C
(
m
A
)
-10
-1
-10
3
-10
2
-1
-10
(1)
(2)
(3)
V
CE
= -10 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
-10
-8
-4
-6
-2
aaa-014481
-0.4
-0.6
-0.2
-0.8
-1
I
C
(A)
0
-2
-4
-6
-8
-10
-12
-14
-16
I
B
= -20 mA
-18
T
amb
= 25 °C
Fig. 5.
Collector current as a function of collector-
emitter voltage; typical values
aaa-014482
-0.4
-0.8
-1.2
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1
-10
(1)
(2)
(3)
V
CE
= -10 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6.
Base-emitter voltage as a function of collector
current; typical values
aaa-014483
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
3
-10
2
-1
-10
(3)
(2)
(1)
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 7.
Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
PMBT2907A
YS
60V
, 600 mA, double PNP switching transistor
PMBT2907AYS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
26 June 2015
8 / 15
aaa-014484
I
C
(mA)
-10
-1
-10
3
-10
2
-1
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-014699
I
C
(mA)
-10
-1
-10
3
-10
2
-1
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PMBT2907AYSX
Mfr. #:
Buy PMBT2907AYSX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V Double PNP Switching Transistor
Lifecycle:
New from this manufacturer.
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