FZT955TA

SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 – MARCH 2005
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS – DEVICE TYPE IN FULL
COMPLEMENTARY TYPES – FZT955 - FZT855
FZT956 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT955 FZT956 UNIT
Collector-Base Voltage V
CBO
-180 -220 V
Collector-Emitter Voltage V
CEO
-140 -200 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-10 -5 A
Continuous Collector Current I
C
-4 -2 A
Power Dissipation at T
amb
=25°C P
tot
3W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT955
FZT956
3 - 284
C
C
E
B
3 - 285 3 - 286
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(sat)
-
(V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(sat)
-
(
V
olts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
mal
ise
d
Gain
V
B
E
(sat)
-
(V
olts)
V
B
E
-
(
V
olts)
I
C
-
C
o
l
le
c
to
r
C
u
r
r
e
nt (Amps
)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=5V
V
CE
=5V
300
200
100
h
FE
- T
ypical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1100010 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.0010.001
0.001
0.001
0.001
FZT955FZT955
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-180 -210 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CER
-180 -210 V
I
C
=-1µA, RB1k
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-140 -170 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6 -8 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-50
-1
nA
µA
V
CB
=-150V
V
CB
=-150V,T
amb
=100°C
Collector Cut-Off Current I
CER
R 1k
-50
-1
nA
µA
V
CB
=-150V
V
CB
=-150V,T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-70
-110
-275
-60
-120
-150
-370
mV
mV
mV
mV
I
C
=-100mA, I
B
=-5mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-970 -1110 mV I
C
=-3A, I
B
=-300mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-830 -950 mV I =-3A, V
CE
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
10
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
I
C
=-10A, V
CE
=-5V*
Transition Frequency f
T
110 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
40 pF V
CB
=-20V, f=1MHz
Switching Times t
on
t
off
68
1030
ns
ns
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 286
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(s
at)
-
(V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(s
at)
-
(
V
olts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
ma
l
is
e
d
Gain
V
B
E
(s
at)
-
(V
olts)
V
B
E
-
(
V
olts)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=5V
V
CE
=5V
300
200
100
h
FE
- T
ypical Gain
0.0010.001
0.001
0.001
0.001
FZT955
1 10 100
0.01
0.1
1
10
10ms
100ms
1s
DC
V
CE
- Collector Current (Amps)
V
CE
- Collector Voltage (Volts)
Safe Operating Area
1ms
100us

FZT955TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP High Current
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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