SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 – MARCH 2005
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS – DEVICE TYPE IN FULL
COMPLEMENTARY TYPES – FZT955 - FZT855
FZT956 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT955 FZT956 UNIT
Collector-Base Voltage V
CBO
-180 -220 V
Collector-Emitter Voltage V
CEO
-140 -200 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Current I
CM
-10 -5 A
Continuous Collector Current I
C
-4 -2 A
Power Dissipation at T
amb
=25°C P
tot
3W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT955
FZT956
3 - 284
C
C
E
B