FZT956TA

FZT956

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-220 -300 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CER

-220 -300 V

I

C

=-1µA, RB ≤1kΩ

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-200 -240 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-6 -8 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-50

-1

nA

µA

V

CB

=-200V

V

CB

=-200V,T

amb

=100°C

Collector Cut-Off Current I

CER

R ≤1kΩ

-50

-1

nA

µA

V

CB

=-200V

V

CB

=-200V,T

amb

=100°C

Emitter Cut-Off Current I

EBO

-10 nA V

EB

=-6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-30

-120

-168

-50

-165

-275

mV

mV

mV

I

C

=-100mA,I

B

=-10mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-400mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-970 -1110 mV I

C

=-2A, I

B

=-400mA

Base-Emitter

Turn-On Voltage

V

BE(on)

-810 -950 mV I

C

=-2A, V

CE

=-5V*

Static Forward

Current Transfer Ratio

h

FE

100

100

50

200

200

150

10

300

I

C

=-10mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-2A, V

CE

=-5V*

I

C

=-5A, V

CE

=-5V*

Transition Frequency f

T

110 MHz I

C

=-100mA, V

CE

=-10V

f=50MHz

Output Capacitance C

obo

32 pF V

CB

=-20V, f=1MHz

Switching Times t

on

t

off

67

1140

ns

ns

I

C

=-1A, I

B1

=-100mA

I

B2

=100mA, V

CC

=-50V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT956

3 - 287 3 - 288

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I -

Collector Current (Amps)

V

-

(V

olts)

V

CE(sat)

v I

C

I -

Collector Current (Amps)

V

-

(

V

ol

ts)

I -

Collector Current (Amps)

I -

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I -

Collector Current (Amps)

V

BE(on)

v I

C

h

-

Norm

al

i

sed G

ai

n

V

-

(

V

ol

ts)

V

-

(

V

ol

ts

)

h

-

T

ypi

cal

Gai

n

Safe Operating Area

Single Pulse Test Tamb=25C

0.1

1

1

10

100

V

CE

- Collector Voltage (V)

10

µ

0.01

1000

FZT956

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-220 -300 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CER

-220 -300 V

I

C

=-1µA, RB ≤1kΩ

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-200 -240 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-6 -8 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-50

-1

nA

µA

V

CB

=-200V

V

CB

=-200V,T

amb

=100°C

Collector Cut-Off Current I

CER

R ≤1kΩ

-50

-1

nA

µA

V

CB

=-200V

V

CB

=-200V,T

amb

=100°C

Emitter Cut-Off Current I

EBO

-10 nA V

EB

=-6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-30

-120

-168

-50

-165

-275

mV

mV

mV

I

C

=-100mA,I

B

=-10mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-400mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-970 -1110 mV I

C

=-2A, I

B

=-400mA

Base-Emitter

Turn-On Voltage

V

BE(on)

-810 -950 mV I

C

=-2A, V

CE

=-5V*

Static Forward

Current Transfer Ratio

h

FE

100

100

50

200

200

150

10

300

I

C

=-10mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-2A, V

CE

=-5V*

I

C

=-5A, V

CE

=-5V*

Transition Frequency f

T

110 MHz I

C

=-100mA, V

CE

=-10V

f=50MHz

Output Capacitance C

obo

32 pF V

CB

=-20V, f=1MHz

Switching Times t

on

t

off

67

1140

ns

ns

I

C

=-1A, I

B1

=-100mA

I

B2

=100mA, V

CC

=-50V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT956

3 - 287 3 - 288

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I -

Collector Current (Amps)

V

-

(V

olts)

V

CE(sat)

v I

C

I -

Collector Current (Amps)

V

-

(

V

ol

ts)

I -

Collector Current (Amps)

I -

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I -

Collector Current (Amps)

V

BE(on)

v I

C

h

-

Norm

al

i

sed G

ai

n

V

-

(

V

ol

ts)

V

-

(

V

ol

ts

)

h

-

T

ypi

cal

Gai

n

Safe Operating Area

Single Pulse Test Tamb=25C

0.1

1

1

10

100

V

CE

- Collector Voltage (V)

10

µ

0.01

1000

FZT956TA

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP High Current

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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