APTC60DAM24T1G Datasheet APTC60DAM24T1G | P1-P3

APTC60DAM24T1G

www.microsemi.com

1



7

11

CR1

Q2

10

9

12

NTC

12

3

4

65

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 600 V

T

c

= 25°C 95

I

D

Continuous Drain Current

T

c

= 80°C 70

I

DM

Pulsed Drain current 260

A

V

GS

Gate - Source Voltage ±20 V

R

DSon

Drain - Source ON Resistance 24

m

P

D

Maximum Power Dissipation T

c

= 25°C 462 W

I

AR

Avalanche current (repetitive and non repetitive) 15 A

E

AR

Repetitive Avalanche Energy 3

E

AS

Single Pulse Avalanche Energy 1900

mJ

Application

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Features

-Ultra low R

DSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

Very low stray inductance

Internal thermistor for temperature monitoring

High level of integration

Benefits

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

Low profile

RoHS Compliant

Boost chopper

Super Junction MOSFET

Power Module

V

DSS

= 600V

R

DSon

= 24m max @ Tj = 25°C

I

D

= 95A @ Tc = 25°C

APTC60DAM24T1G

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2

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7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 600V

T

j

= 25°C 350

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 600V

T

j

= 125°C 600

µA

R

DS(on)

Drain  Source on Resistance

V

GS

= 10V, I

D

= 47.5A 24

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 2.1 3 3.9 V

I

GSS

Gate  Source Leakage Current V

GS

= ±20 V, V

DS

= 0V 200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 14.4

C

oss

Output Capacitance

V

GS

= 0V ; V

DS

= 25V

f = 1MHz

17

nF

Q

g

Total gate Charge 300

Q

gs

Gate  Source Charge 68

Q

gd

Gate  Drain Charge

V

GS

= 10V

V

Bus

= 300V

I

D

= 95A

102

nC

T

d(on)

Turn-on Delay Time 21

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 100

T

f

Fall Time

Inductive Switching (125°C)

V

GS

= 10V

V

Bus

= 400V

I

D

= 95A

R

G

= 2.5

45

ns

E

on

Turn-on Switching Energy 1350

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1040

µJ

E

on

Turn-on Switching Energy 2200

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1270

µJ

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 100

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 125°C 500

µA

I

F

DC Forward Current Tc = 80°C 100 A

I

F

= 100A 1.6 2

I

F

= 200A 2

V

F

Diode Forward Voltage

I

F

= 100A T

j

= 125°C 1.3

V

T

j

= 25°C 160

t

rr

Reverse Recovery Time

T

j

= 125°C 220

ns

T

j

= 25°C 290

Q

rr

Reverse Recovery Charge

I

F

= 100A

V

R

= 400V

di/dt =200A/µs

T

j

= 125°C 1530

nC

APTC60DAM24T1G

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3



7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

Transistor

0.27

R

thJC

Junction to Case Thermal Resistance

Diode

0.55

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K

TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTC60DAM24T1G

APTC60DAM24T1G

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