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IXFN48N50U2

P1-P3P4-P5
1 - 5
© 2000 IXYS All rights reserved
3
4
1
2
3
4
2
1
CASE
DIODE HiPerFET MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
96535B (7/00)
Buck & Boost Configurations for
PFC & Motor Control Circuits
V
DSS
I
D (cont)
R
DS(on)
t
rr
500 V 44 A 0.12 W 35 ns
500 V 48 A 0.10 W 35 ns
IXFN44N50U2 IXFN44N50U3
IXFN48N50U2 IXFN48N50U3
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 44N50 44 A
48N50 48 A
I
DM
T
C
= 25°C, 44N50 176 A
pulse width limited by max. T
JM
48N50 192 A
I
AR
T
C
= 25°C24A
E
AR
Repetitive 30 mJ
dv/dt I
S
£ I
DM
, -di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 520 W
V
RRM
600 V
I
FAVM
T
C
= 70°C; rectangular, d = 0.5 60 A
I
FRM
tp <10 ms; pulse width limited by T
J
800 A
P
D
T
C
= 25°C 180 W
T
J
-40 ... +150 °C
T
JM
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
miniBLOC, SOT-227 B
2
1
4
3
Features
· Popular Buck & Boost circuit
topologies
· International standard package
miniBLOC SOT-227B
· Aluminium nitride isolation
- high power dissipation
· Isolation voltage 3000 V~
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance
(<60 pF)
- reduced RFI
· Ultra-fast FRED diode with soft
reverse recovery
Applications
· Power factor controls and buck
regulators
· DC servo and robotic drives
· DC choppers
· Switch reluctance motor controls
Advantages
· Easy to mount with 2 screws
· Space savings
· Tightly coupled FRED
HiPerFET
TM
Power MOSFETs
Preliminary data
2 - 5
© 2000 IXYS All rights reserved
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C 400 mA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
44N50 0.12 W
48N50 0.10 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V, I
D
= 0.5 I
D25
, pulse test 22 42 S
C
iss
8400 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 900 pF
C
rss
280 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60 ns
t
d(off)
R
G
= 1 W (External) 100 ns
t
f
30 ns
Q
g(on)
270 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60 nC
Q
gd
135 nC
R
thJC
0.24 K/W
R
thCK
0.05 K/W
Ultra-fast Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
R
T
J
= 25°C; V
R
= V
RRM
200 mA
V
R
= 0.8V
RRM
100 mA
T
J
= 125°C; V
R
= 0.8V
RRM
14 mA
V
F
I
F
= 70A, V
GS
= 0 V, T
J
= 150°C 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % T
J
= 25°C 1.8 V
t
rr
I
I
= 1A, di/dt = -200 A/ms, V
R
= 30 V, T
J
= 25°C3550ns
I
RM
I
F
= 60A, di/dt = -480 A/ms, V
R
= 350 V, T
J
= 100°C 19 21 A
R
thJC
0.7 K/W
R
thJK
0.05 K/W
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 5
© 2000 IXYS All rights reserved
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig.1 Output Characteristics Fig.2 Input Admittance
Fig.5 Drain Current vs. Fig.6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig.3 R
DS(on)
vs. Drain Current Fig.4 Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
V
GS(th)
T
C
- Degrees C
-50-250 255075100125150
I
D
- Amperes
0
10
20
30
40
50
60
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0 102030405060708090100
R
DS(on)
- Normalized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
GS
- Volts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
0 5 10 15 20 25 30 35
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
5V
6V
7V
V
GS
= 10V
V
GS
= 10V
V
GS
= 15V
I
D
= 24A
44N50
48N50
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
P1-P3P4-P5

IXFN48N50U2

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Description:
MOSFET N-CH 500V 48A SOT-227B
Lifecycle:
New from this manufacturer.
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