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BPW34S

P1-P3P4-P5
BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-Aug-11
1
Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high
radiant sensitivity in miniature, flat, top view, clear plastic
package. It is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8583
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.1
(nm)
BPW34 50 ± 65 430 to 1100
BPW34S 50 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW34 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view
BPW34S Tube MOQ: 1800 pcs, 45 pcs/tube Top view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 3 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W
BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-Aug-11
2
Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current
E
A
= 1 klx I
k
70 μA
E
e
= 1 mW/cm
2
, λ = 950 nm I
k
47 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
A
= 1 klx, V
R
= 5 V I
ra
75 μA
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
40 50 μA
Angle of half sensitivity
ϕ
± 65 deg
Wavelength of peak sensitivity λ
p
900 nm
Range of spectral bandwidth λ
0.1
430 to 1100 nm
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√Hz
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-Aug-11
3
Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8417
V
R
= 5 V
λ = 950 nm
E
e
- Irradiance (mW/cm
2
)
I
ra
- Reverse Light Current (µA)
0.1
1
10
100
1000
94 8418
10
1
10
2
10
3
10
4
V
R
=5V
E
A
- Illuminance (lx)
I - Reverse Light Current (µA)
ra
0.1 1 10
1
10
100
100
94 8419
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
λ = 950 nm
V
R
- Reverse Voltage (V)
I
ra
- Reverse Light Current (µA)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivit
y
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P5

BPW34S

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Optical Sensors Photodiodes Photo pin diode cl
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