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PMZ1200UPEYL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMZ1200UPE
30 V, P-channel Trench MOSFET
PMZ1200UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 25 March 2015 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -30 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -0.45 -0.7 -0.95 V
I
DSS
drain leakage current V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C - - 5 µA
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C - - -5 µA
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C - - 1 µA
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C - - -1 µA
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
I
GSS
gate leakage current
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nA
V
GS
= -4.5 V; I
D
= -410 mA; T
j
= 25 °C - 1.2 1.4 Ω
V
GS
= -4.5 V; I
D
= -410 mA; T
j
= 150 °C - 2 2.4 Ω
V
GS
= -2.5 V; I
D
= -320 mA; T
j
= 25 °C - 1.7 2.3 Ω
V
GS
= -1.8 V; I
D
= -80 mA; T
j
= 25 °C - 2.1 3.1 Ω
R
DSon
drain-source on-state
resistance
V
GS
= -1.5 V; I
D
= -10 mA; T
j
= 25 °C - 3 5.1 Ω
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -410 mA; T
j
= 25 °C - 820 - mS
Dynamic characteristics
Q
G(tot)
total gate charge - 0.7 1.2 nC
Q
GS
gate-source charge - 0.2 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -410 mA;
V
GS
= -4.5 V; T
j
= 25 °C
- 0.2 - nC
C
iss
input capacitance - 43.2 - pF
C
oss
output capacitance - 5.9 - pF
C
rss
reverse transfer
capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 4.2 - pF
t
d(on)
turn-on delay time - 3 - ns
t
r
rise time - 4 - ns
t
d(off)
turn-off delay time - 14 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -410 mA;
V
GS
= -4.5 V; R
G(ext)
= 6 Ω; T
j
= 25 °C
- 5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -410 mA; V
GS
= 0 V; T
j
= 25 °C - -0.95 -1.2 V
NXP Semiconductors
PMZ1200UPE
30 V, P-channel Trench MOSFET
PMZ1200UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 25 March 2015 7 / 15
V
DS
(V)
0 -4-3-1 -2
aaa-017220
-2.0
I
D
(A)
0
-0.5
-1.0
-1.5
-2.5 V
-2.0 V
-1.8 V
-1.5 V
V
GS
= -4.5 V
-1.2 V
-3.0 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-017221
V
GS
(V)
0 -1.5-1.0-0.5
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
(1) (2)
(3)
V
DS
= -5 V
T
j
= 25 °C
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-017222
I
D
(A)
0 -2.0-1.5-1.0-0.5
10
R
DS(on)
(Ω)
0
2
4
6
8
-2.5 V
-2.0 V
V
GS
= -1.5 V
-1.8 V
-3.0 V
-4.5 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 -5-4-2 -3-1
aaa-017223
10
R
DS(on)
(Ω)
0
2
4
6
8
T
j
= 150 °C
T
j
= 25 °C
I
D
= -0.4 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
PMZ1200UPE
30 V, P-channel Trench MOSFET
PMZ1200UPE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 25 March 2015 8 / 15
V
GS
(V)
0 -4-3-1 -2
aaa-017224
-0.4
-0.6
-0.2
-0.8
-1.0
I
D
(A)
0
T
j
= 150 °C
T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-017225
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-017226
-0.5
-1.0
-1.5
V
GS(th)
(V)
0
(1)
(2)
(3)
I
D
= -250 μA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
aaa-017227
V
DS
(V)
-10
-1
-10
2
-10-1
10
10
2
C
(pF)
1
(1)
(2)
(3)
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMZ1200UPEYL

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Description:
MOSFET 30V Dual N-Channel Trench MOSFET
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