MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
3
30 k
0.3
Figure 2. DC Current Gain (1)
I
C
, COLLECTOR CURRENT (AMP)
0.5 0.7 1 2 3 10 20 30
7 k
3 k
2 k
700
Figure 3. Small−Signal Current Gain
h
FE
, SMALL-SIGNAL CURRENT GAIN (NORMALIZE
2
10
f, FREQUENCY (kHz)
20 30 50 70 200 300 500 1.0 k
0.2
0.05
0.02
0.01
10 k
5 k
h
FE
, DC CURRENT GAIN
V
CE
= 5 Vdc
T
J
= 25°C
500
300
5 7 100
5
0.1
Figure 4. “On” Voltages (1)
I
C
, COLLECTOR CURRENT (AMP)
100
0
V
BE(sat)
Figure 5. Active Region DC Safe Operating Area
20 k
PNP MJ11015
NPN MJ11012, MJ11016
V, VOLTAGE (VOLTS)
4
3
2
1
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
35 10
20
200
10
5
0.01
20
I
C
, COLLECTOR CURRENT (AMP)
2
1
0.2
0.1
0.5
0.05
0.02
50
T
J
= 25°C
I
C
/I
B
= 100
V
CE
= 3 Vdc
I
C
= 10 mAdc
T
J
= 25°C
0.1
0.5
1
0.005
700
MJ11012
MJ11015, MJ11016
27
30
70 100220500.2 0.5 1 105
V
CE(sat)
PNP MJ11015
NPN MJ11012, MJ11016
PNP MJ11015
NPN MJ11012, MJ11016
BONDING WIRE LIMITATION
THERMAL LIMITATION @ T
C
= 25°C
SECOND BREAKDOWN LIMITATION
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
