NCP81074A, NCP81074B
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4
RECOMMENDED OPERATING CONDITIONS
Parameter Rating Unit
VDD supply Voltage 4.5 to 20 V
IN+, IN− input voltages −5 to 20 V
Junction Temperature Range −40 to +140 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 1. THERMAL INFORMATION
Package Theta JA (5C/W) Theta JC (5C/W)
DFN−8 2x2 80.3 11.9
SOIC−8 115 50
Table 2. ELECTRICAL CHARACTERISTICS (Note 1) (Typical values: VDD =12V, 1uF from VDD to GND,TA = TJ =
−405C to 1405C, typical at T
AMB
= 255C, unless otherwise specified)
Parameter SYMBOL Test Conditions MIN TYP MAX Unit
SUPPLY VOLTAGE
VDD Under Voltage Lockout (rising)
V
CCR
VDD rising 3.7 3.9 4.1 V
VDD Under Voltage Lockout (Falling) V
CCF
VDD falling 3.4 3.6 3.8 V
VDD Under Voltage Lockout (hysteresis) V
CCH
300 mV
Operating Current (no switching) I
DD
1.2 2 mA
VDD Under Voltage Lockout to Output
Delay (Note 1)
VDD rising 10
ms
INPUTS
NCP81074A High Threshold
V
thH
Input rising from logic low 1.9 2.1 2.3 V
NCP81074A Low Threshold V
thL
Input falling from logic high 1.1 1.3 1.5 V
VIN_HYS
Input Signal
Hysteresis
0.8 V
NCP81074B High Threshold V
thH
Input rising from logic low
(VDD = 8 V to 12 V)
VDD
−3.5
VDD
−3.1
VDD
−2.7
V
NCP81074B Low Threshold V
thL
Input falling from logic high
(VDD = 8 V to 12 V)
GND
+2.6
GND
+2.9
GND
+3.2
V
IN− Pull−up Resistor R
in−
200
kW
IN+ Pull−Down Resistor R
in+
200
kW
OUTPUTS
Output Resistance High
R
OH
IOUT = −10 mA 0.4 0.8
W
Output Resistance Low R
OL
IOUT = +10 mA 0.4 0.8
W
Peak Source Current
(2)
I
Source
OUT = GND
200 ns Pulse
10 A
Miller Plateau Source Current
(2)
I
Source
OUT = 5.0 V
200 ns Pulse
7 A
Peak Sink Current
(2)
I
Sink
OUT = VDD
200 ns Pulse
10 A
Miller Plateau Sink Current
(2)
I
Sink
OUT = 5.0 V
200 ns Pulse
7 A
