NBXDBA014
http://onsemi.com
3
Table 6. DC CHARACTERISTICS (V
DD
= 3.3 V ± 10%, GND = 0 V, T
A
= −40°C to +85°C)
Symbol
Characteristic Conditions Min. Typ. Max. Units
I
DD
Power Supply Current (Note 2) 50 65 mA
V
IH
OE and FSEL Input HIGH Voltage 2000 V
DD
mV
V
IL
OE and FSEL Input LOW Voltage GND − 300 800 mV
I
IH
Input HIGH Current OE
FSEL
−100
−100
+100
+100
mA
I
IL
Input LOW Current OE
FSEL
−100
−100
+100
+100
mA
V
OH
Output HIGH Voltage (Note 2)
V
DD
= 3.3 V
V
DD
−1145
2155
V
DD
−895
2405
mV
V
OL
Output LOW Voltage (Note 2)
V
DD
= 3.3 V
V
DD
−1945
1355
V
DD
−1600
1700
mV
V
OUTPP
Output Voltage Amplitude (Note 2) 780 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to V
DD
−2 V.
Table 7. AC CHARACTERISTICS (V
DD
= 3.3 V ± 10%, GND = 0 V, T
A
= −40°C to +85°C) (Note 3)
Symbol Characteristic Conditions Min. Typ. Max. Units
f
CLKOUT
Output Clock Frequency
FSEL = HIGH 62.5
MHz
FSEL = LOW 125
Df
Frequency Stability NBXDBA014 (Note 4) ±50 ppm
F
NOISE
Phase−Noise Performance
f
CLKout
= 62.5 MHz/125 MHz
100 Hz of Carrier −111/104 dBc/Hz
1 kHz of Carrier −129/−123 dBc/Hz
10 kHz of Carrier −138/−132 dBc/Hz
100 kHz of Carrier −141/−135 dBc/Hz
1 MHz of Carrier −141/−135 dBc/Hz
10 MHz of Carrier −159/−156 dBc/Hz
t
jit
(F)
RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps
t
jitter
Cycle to Cycle, RMS 1000 Cycles 3 10 ps
Cycle to Cycle, Peak−to−Peak 1000 Cycles 15 35 ps
Period, RMS 10,000 Cycles 2 5 ps
Period, Peak−to−Peak 10,000 Cycles 10 25 ps
t
OE/OD
Output Enable/Disable Time 200 ns
t
DUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
48 50 52 %
t
R
Output Rise Time (20% and 80%) 380 620 ps
t
F
Output Fall Time (80% and 20%) 400 620 ps
t
start
Start−up Time 1 5 ms
Aging
1
st
Year 3 ppm
Every Year After 1
st
1 ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to V
DD
−2 V.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.