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74LVU04DB,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
74LVU04 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 7 — 18 September 2014 4 of 20
NXP Semiconductors
74LVU04
Hex unbuffered inverter
7. Functional description
[1] H = HIGH voltage level;
L = LOW voltage level.
8. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] P
tot
derates linearly with 12 mW/K above 70 C.
[3] P
tot
derates linearly with 8 mW/K above 70 C.
[4] P
tot
derates linearly with 5.5 mW/K above 60 C.
[5] P
tot
derates linearly with 4.5 mW/K above 60 C.
Table 3. Function table
[1]
Input nA Output nY
LH
HL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7.0 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+0.5V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
CC
+0.5V
[1]
- 50 mA
I
O
output current V
O
= 0.5 V to (V
CC
+0.5V) - 25 mA
I
CC
supply current - 50 mA
I
GND
ground current 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
DIP14 package
[2]
- 750 mW
SO14 package
[3]
- 500 mW
(T)SSOP14 package
[4]
- 500 mW
DHVQFN14 package
[5]
- 500 mW
74LVU04 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 7 — 18 September 2014 5 of 20
NXP Semiconductors
74LVU04
Hex unbuffered inverter
9. Recommended operating conditions
[1] The static characteristics are guaranteed from V
CC
= 1.2 V to V
CC
= 5.5 V, but LV devices are guaranteed to function down to
V
CC
= 1.0 V (with input levels GND or V
CC
).
10. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage
[1]
1.0 3.3 5.5 V
V
I
input voltage 0 - V
CC
V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 1.0 V to 2.0 V - - 500 ns/V
V
CC
= 2.0 V to 2.7 V - - 200 ns/V
V
CC
= 2.7 V to 3.6 V - - 100 ns/V
V
CC
= 3.6 V to 5.5 V - - 50 ns/V
Table 6. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level input voltage V
CC
= 1.2 V 1.0 - - 1.0 - V
V
CC
= 2.0 V 1.6 - - 1.6 - V
V
CC
= 2.7 V to 3.6 V 2.4 - - 2.4 - V
V
CC
= 4.5 V to 5.5 V 0.8V
CC
- - 0.8V
CC
-V
V
IL
LOW-level input voltage V
CC
= 1.2 V - - 0.2 - 0.2 V
V
CC
= 2.0 V - - 0.4 - 0.4 V
V
CC
= 2.7 V to 3.6 V - - 0.5 - 0.5 V
V
CC
= 4.5 V to 5.5 V - - 0.2V
CC
-0.2V
CC
V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 100 A; V
CC
= 1.2 V - 1.2 - - - V
I
O
= 100 A; V
CC
= 2.0 V 1.8 2.0 - 1.8 - V
I
O
= 100 A; V
CC
= 2.7 V 2.5 2.7 - 2.5 - V
I
O
= 100 A; V
CC
= 3.0 V 2.8 3.0 - 2.8 - V
I
O
= 100 A; V
CC
= 4.5 V 4.3 4.5 - 4.3 - V
I
O
= 6 mA; V
CC
= 3.0 V 2.4 2.82 - 2.2 - V
I
O
= 12 mA; V
CC
= 4.5 V 3.6 4.2 - 3.5 - V
74LVU04 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 7 — 18 September 2014 6 of 20
NXP Semiconductors
74LVU04
Hex unbuffered inverter
[1] Typical values are measured at T
amb
= 25 C.
11. Dynamic characteristics
[1] All typical values are measured at T
amb
=25C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] Typical values are measured at nominal supply voltage (V
CC
= 3.3 V).
[4] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz, f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in V
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs.
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 100 A; V
CC
= 1.2 V - 0 - - - V
I
O
= 100 A; V
CC
= 2.0 V - 0 0.2 - 0.2 V
I
O
= 100 A; V
CC
= 2.7 V - 0 0.2 - 0.2 V
I
O
= 100 A; V
CC
= 3.0 V - 0 0.2 - 0.2 V
I
O
= 100 A; V
CC
= 4.5 V - 0 0.2 - 0.2 V
I
O
= 6 mA; V
CC
= 3.0 V - 0.25 0.40 - 0.50 V
I
O
= 12 mA; V
CC
= 4.5 V - 0.35 0.55 - 0.65 V
I
I
input leakage current V
I
=V
CC
or GND;
V
CC
=5.5V
- - 1.0 - 1.0 A
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
=5.5V
- - 20.0 - 40 A
C
I
input capacitance - 3.5 - - - pF
Table 6. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; For test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA, nB to nY; see Figure 6
[2]
V
CC
= 1.2 V - 35 - - - ns
V
CC
= 2.0 V - 12 14 - 17 ns
V
CC
= 2.7 V - 9 10 - 13 ns
V
CC
= 3.0 V to 3.6 V; C
L
=15pF
[3]
-6- - -ns
V
CC
= 3.0 V to 3.6 V
[3]
- 7 8 - 10 ns
V
CC
= 4.5 V to 5.5 V - - 7 - 9 ns
C
PD
power dissipation
capacitance
C
L
=50pF; f
i
= 1 MHz;
V
I
=GNDtoV
CC
[4]
-18- - -pF
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74LVU04DB,112

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Buy 74LVU04DB,112
Manufacturer:
NXP Semiconductors
Description:
Inverters HEX INVERTER (UNBUF)
Lifecycle:
New from this manufacturer.
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