LL101B-GS18

LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 15-May-12
1
Document Number: 85626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
For general purpose applications
The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guard ring
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
Integrated protection ring against static discharge
Low capacitance
Low leakage current
• This diode is also available in the DO-35 case with type
designation SD101A, B, C and in the SOD-123 case with
type designation SD101AW-V, SD101BW-V, SD101CW-V
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
HF-detector
Protection circuit
Diode for low currents wits a low supply voltage
Small battery charger
Power supplies
DC/DC converter for notebooks
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART TYPE DIFFERENTATION ORDERING CODE
INTERNAL
CONSTRUCTION
REMARKS
LL101A V
R
= 60 V, V
F
at I
F
= 1 mA max. 410 mV LL101A-GS18 or LL101A-GS08 Single diode Tape and reel
LL101B V
R
= 50 V, V
F
at I
F
= 1 mA max. 400 mV LL101B-GS18 or LL101B-GS08 Single diode Tape and reel
LL101C V
R
= 40 V, V
F
at I
F
= 1 mA max. 390 mV LL101C-GS18 or LL101C-GS08 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
LL101A V
RRM
60 V
LL101B V
RRM
50 V
LL101C V
RRM
40 V
Power dissipation (infinite heatsink)
(1)
P
tot
400 mW
Forward continuous courrent I
F
30 mA
Maximum single cycle surge 10 μs square wave I
FSM
2A
LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 15-May-12
2
Document Number: 85626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typ. I
F
vs. V
F
for Primary Conduction through the Schottky
Barrier
Fig. 2 - Typ. I
F
of Combination Schottky Barrier and PN Junction
Guard Ring
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
320 K/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage I
R
= 10 μA
LL101A V
(BR)
60 V
LL101B V
(BR)
50 V
LL101C V
(BR)
40 V
Leakage current
V
R
= 50 V LL101A I
R
200 nA
V
R
= 40 V LL101B I
R
200 nA
V
R
= 30 V LL101C I
R
200 nA
Forward voltage drop
I
F
= 1 mA LL101A V
F
0.410 V
I
F
= 1 mA LL101B V
F
0.400 V
I
F
= 1 mA LL101C V
F
0.390 V
I
F
= 15 mA
LL101A V
F
1000 mV
LL101B V
F
950 mV
LL101C V
F
900 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz LL101A C
D
2.0 pF
V
R
= 0 V, f = 1 MHz
LL101B C
D
2.1 pF
LL101C C
D
2.2 pF
Reverse recovery time I
F
= I
R
= 5 mA, recover to 0.1 I
R
t
rr
1ns
gll101a_01
gll101a_02
LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 15-May-12
3
Document Number: 85626
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
gll101a_03
gll101a_04
Cathode indification
0.47 (0.019) max.
2.5 (0.098) max.
1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070

LL101B-GS18

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30mA 50 Volt 2.0 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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