BUL138FP Datasheet BUL138FP | P1-P3

BUL138FP

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERIZED AT 125

o

C

■ FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

APPLICATIONS

■ ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■ FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The BUL138FP is manufactured using high

voltage Multi Epitaxial Planar technology for high

switching speeds and high voltage capability. It

uses a Cellular Emitter structure with planar edge

termination to enhance switching speeds.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

September 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

Collector-Emitter Voltage (V

BE

= 0) 800 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 400 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 9 V

I

C

Collector Current 5 A

I

CM

Collector Peak Current (t

p

< 5 ms) 10 A

I

B

Base Current 2 A

I

BM

Base Peak Current (t

p

< 5 ms) 4 A

P

tot

Total Dissipation at T

c

= 25

o

C33W

V

isol

Insulation Withstand Voltage (RMS) from All

Three Leads to Exernal Heatsink

1500 V

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

1

2

3

TO-220FP

®

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Obsolete Product(s) - Obsolete Product(s)

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THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

3.8

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

Collector Cut-off

Current (V

BE

= 0)

V

CE

= 800 V

V

CE

= 800 V T

j

= 125

o

C

100

500

µA

I

CEO

Collector Cut-off

Current (I

B

= 0)

V

CE

= 400 V 250 µA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 100 mA L = 25 mH 400 V

V

EBO

Emitter-Base Voltage I

E

= 10 mA 9 V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 1 A I

B

= 0.2 A

I

C

= 2 A I

B

= 0.4 A

I

C

= 3 A I

B

= 0.6 A

I

C

= 4 A I

B

= 1 A

I

C

= 5 A I

B

= 1 A 0.7

0.5

0.7

1

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 1 A I

B

= 0.2 A

I

C

= 2 A I

B

= 0.4 A

I

C

= 3 A I

B

= 0.6 A

1.1

1.3

1.5

V

h

FE

∗ DC Current Gain I

C

= 2 A V

CE

= 5 V

I

C

= 10 mA V

CE

= 5 V

8

10

40

t

s

t

f

INDUCTIVE LOAD

Storage Time

Fall Time

I

C

= 2 A I

B1

= 0.4 A

V

BE(off)

= -5 V R

BB

= 0 Ω

V

CL

= 250 V L = 200 µH

0.7

50

1.4

100

µs

ns

t

s

t

f

INDUCTIVE LOAD

Storage Time

Fall Time

I

C

= 2 A I

B1

= 0.4 A

V

BE(off)

= -5V R

BB

= 0 Ω

V

CL

= 250 V L = 200 µH

T

j

= 125

o

C

1

75

µs

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas Derating Curve

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DC Current Gain

Collector-Emitter Saturation Voltage

Inductive Fall Time

DC Current Gain

Base-Emitter Saturation Voltage

Inductive Storage Time

BUL138FP

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BUL138FP

BUL138FP

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