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IXBT20N300

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 3000 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 3000 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 50 A
I
C110
T
C
= 110°C 20 A
I
CM
T
C
= 25°C, 1ms 140 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 20Ω I
CM
= 130 A
(RBSOA) Clamped Inductive Load 1500 V
P
C
T
C
= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS100124A(12/12)
IXBH20N300
IXBT20N300
V
CES
= 3000V
I
C110
= 20A
V
CE(sat)
≤≤
≤≤
≤ 3.2V
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
z
High Blocking Voltage
z
Anti-Parallel Diode
z
International Standard Packages
z
Low Conduction Losses
Advantages
z
Low Gate Drive Requirement
z
High Power Density
Applications:
z
Switch-Mode and Resonant-Mode
Power Supplies
z
Uninterruptible Power Supplies (UPS)
z
Laser Generators
z
Capacitor Discharge Circuits
z
AC Switches
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 3000 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
2.5 5.0 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 35 μA
T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 20A, V
GE
= 15V, Note 1 2.7 3.2 V
T
J
= 125°C 3.2 V
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
E
C (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH20N300
IXBT20N300
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 20A, V
CE
= 10V, Note 1 11 18 S
C
ies
2230 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 92 pF
C
res
33 pF
Q
g
105 nC
Q
ge
I
C
= 20A, V
GE
= 15V, V
CE
= 1000V 13 nC
Q
gc
45 nC
t
d(on)
64 ns
t
r
210 ns
t
d(off)
300 ns
t
f
504 ns
t
d(on)
68 ns
t
r
540 ns
t
d(off)
300 ns
t
f
395 ns
R
thJC
0.50 °C/W
R
thCS
(TO-247) 0.21 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, T
J
= 125°C
I
C
= 20A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Resistive Switching Times, T
J
= 25°C
I
C
= 20A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 20A, V
GE
= 0V 2.1 V
t
rr
1.35 μs
I
RM
30 A
I
F
= 10A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBH20N300
IXBT20N300
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
00.511.5 22.5 33.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
02468101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
20V
10V
15V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
10V
5V
V
GE
= 25V
20V
15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 10A
I
C
= 20A
I
C
= 40A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
TJ = 25ºC
I
C
= 40A
20A
10A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P5

IXBT20N300

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Description:
IGBT 3000V 50A 250W TO268
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