CY62137VN MoBL
®
Document #: 001-06497 Rev. *A Page 5 of 11
Switching Characteristics Over the Operating Range
[6]
Parameter Description
55 ns 70 ns
UnitMin. Max. Min. Max.
Read Cycle
t
RC
Read Cycle Time 55 70 ns
t
AA
Address to Data Valid 55 70 ns
t
OHA
Data Hold from Address Change 10 10 ns
t
ACE
CE LOW to Data Valid 55 70 ns
t
DOE
OE LOW to Data Valid 25 35 ns
t
LZOE
OE LOW to Low-Z
[7]
55ns
t
HZOE
OE HIGH to High-Z
[7, 8]
25 25 ns
t
LZCE
CE LOW to Low-Z
[7]
10 10 ns
t
HZCE
CE HIGH to High-Z
[7, 8]
25 25 ns
t
PU
CE LOW to Power-up 0 0 ns
t
PD
CE HIGH to Power-down 55 70 ns
t
DBE
BHE / BLE LOW to Data Valid 55 70 ns
t
LZBE
(9)
BHE / BLE LOW to Low-Z 5 5 ns
t
HZBE
BHE / BLE HIGH to High-Z 25 25 ns
Write Cycle
[10, 11]
t
WC
Write Cycle Time 55 70 ns
t
SCE
CE LOW to Write End 45 60 ns
t
AW
Address Set-up to Write End 45 60 ns
t
HA
Address Hold from Write End 0 0 ns
t
SA
Address Set-up to Write Start 0 0 ns
t
PWE
WE Pulse Width 40 50 ns
t
SD
Data Set-up to Write End 25 30 ns
t
HD
Data Hold from Write End 0 0 ns
t
HZWE
WE LOW to High-Z
[7, 8]
20 25 ns
t
LZWE
WE HIGH to Low-Z
[7]
510ns
t
BW
BHE / BLE LOW to End of Write 50 60 ns
Notes:
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input levels of 0 to V
CC
typ., and output loading of the specified
I
OL
/I
OH
and 30 pF load capacitance.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
9. If both byte enables are toggled together this value is 10 ns.
10.The internal write time of the memory is defined by the overlap of CE
LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
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